IMPURITY CONCENTRATIONS ON GAAS(100)

Award Information

Agency: Department of Defense	Branch: Defense Advanced Research Projects Agency	Award ID: 4034	Program Year/Program: 1986 / SBIR
Agency Tracking Number: 4034	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: IONWERKS, INC.
3401 Louisiana St., Suite 355 HOUSTON, TX 77002
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Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No

Phase 1: Fiscal Year: 1986

Title: IMPURITY CONCENTRATIONS ON GAAS(100)

Agency / Branch: DOD / DARPA

Contract: N/A

Award Amount: $50,000.00

Abstract:
DETERMINATION OF THE SURFACE STOICHIOMETRY OF SEMICONDUCTOR SURFACES DURING PROCESSING BY MBE OR CVD IS DESIREABLE. DIRECT RECOIL SPECTROSCOPY (DRS) MAY OVERCOME THE LIMITATIONS INHERENT IN CONVENTIONAL SURFACE ANALYSIS SO THAT ANALYSIS OF GAAS SURFACES SIMULTANEOUSLY FOR H, C, O, N, AL, SI, FE, ZN, GA, AND AS WILL BE POSSIBLE ON SUBSECOND TIME SCALES AT MODERATE PRESSURE (10(-2) TORR). AZIMUTHAL SCANS OF THE SINGLE CRYSTAL SUBSTRATE COUPLED WITH BLOCKING AND SHADOWING ANALYSIS WILL PROVIDE DOPANT AND IMPURITY SURFACE POSITION. DRS WILL BE USED AS A REAL TIME MONITOR OF AL DEPOSITION ON GAAS.

Principal Investigator:
J albert schultz
7136671691

Business Contact:

Small Business Information at Submission:

Ionwerks
2215 Addison Houston, TX 77030

EIN/Tax ID:

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No