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Monitoring Epitaxial Layer Growth

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
18042
Program Year/Program:
1993 / SBIR
Agency Tracking Number:
18042
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
IONWERKS, INC.
3401 Louisiana St., Suite 355 HOUSTON, TX -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1993
Title: Monitoring Epitaxial Layer Growth
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $200,000.00
 

Abstract:

When making a structure like AlGaAs or SiGe by heteroexpitaxial growth techniques, it would be nice to know when one atomic layer is completed so that the next can be started. The quality of the device depends on accurate control of the thickness and purity of each layer. Currently, no way exists to detect both layer growth and atomic composition during expitaxial processing of electronic and optoelectronic materials. Our proposed method allows detection of layer growth and atomic composition and would give data complementary to RHEED (reflection high energy electron diffraction) which is commonly used to sense the completion of each epilayer (but gives no composition data). We will accomplish this in real time with no instrumental obstruction of the vapor fluxes to the growing film. In addition, we can perform our experiment at pressure of a few mTorr which allows monitoring and control of films grown by LPCVD (low pressure chemical vapor deposition).

Principal Investigator:

J. Albert Schultz
7135229880

Business Contact:

Small Business Information at Submission:

Ionwerks
2215 Addison Houston, TX 77030

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No