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GROWTH OF LATTICE MATCHED GAN/INGAN/ZNO IN A MBE/CBE CHAMBER OPTIMIZED FOR HIGH…

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
25601
Program Year/Program:
1994 / SBIR
Agency Tracking Number:
25601
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
IONWERKS, INC.
3401 Louisiana St., Suite 355 HOUSTON, TX -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1994
Title: GROWTH OF LATTICE MATCHED GAN/INGAN/ZNO IN A MBE/CBE CHAMBER OPTIMIZED FOR HIGH TEMPERATURE WIDE BANDGAP NITRIDE GROWTH
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $60,000.00
 

Abstract:

Ionwerks has begun an internally funded project to design and manufacture an MBE growth chamber specifically designed and optimized for wide bandgap nitrides (compatible with Si/Ge growth also). This chamber will include two proprietary growth techniques which we have found to be crucial for formation of cBN thin films. Design and construction of this chamber is underway. We will use this equipment to grow lattice matched InGaN/ZnO having a bandgap of around 3.1 eV.

Principal Investigator:

J. Albert Schultz
7135229880

Business Contact:

Small Business Information at Submission:

Ionwerks
2472 Bolsover, Suite 255 Houston, TX 77005

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No