MBE Thin Film Formation Using Nitrogen Source

Award Information

Agency: Department of Defense	Branch: Missile Defense Agency	Award ID: 28346	Program Year/Program: 1995 / SBIR
Agency Tracking Number: 28346	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: IONWERKS, INC.
3401 Louisiana St., Suite 355 HOUSTON, TX 77002
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Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No

Phase 1: Fiscal Year: 1995

Title: MBE Thin Film Formation Using Nitrogen Source

Agency / Branch: DOD / MDA

Contract: N/A

Award Amount: $59,953.00

Abstract:
A novel nitrogen beam source will provide 5 eV atomic and molecular nitrogen to a 0.5 cm diameter circle with a flux of 10(21)/cm(2)/sec. Larger areas can be irradiated with a lower flux (eg. 10(18)/cm(2)/sec over a 2" diameter wafer). The technique will put minimal gas load into the chamber so it will be compatible with ion pumped MBE systems. The source will be used in an attempt to synthesize crystalline cBN and InGaN thin films. Nitrides in thin film form are potentially commercializable. The sale of the atom source as an add-on to thin film deposition systems is directly commercializable even after Phase I. The source may be particularly appropriate for wide bandgap nitride synthesis.

Principal Investigator:
J. Albert Schultz
7135229880

Business Contact:

Small Business Information at Submission:

Ionwerks
2472 Bolsover, Suite 255 Houston, TX 77005

EIN/Tax ID:

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No