Novel Pulsed Nitrogen Source Diagnostic for GaN Thin Film Stoichiometry Control
Agency / Branch:
DOD / USAF
Good insitu tools exist for measuring temperatures and thickness during epitaxial thin film growth. In contrast, almost no technique gives information on surface elemental composition in real time. We propose an extremely simple experiment which can be performed with an ion source little more complex that a noble ion sputter gun. This technique can very accurately measure surface coverages of light elements on heavy or heavy elements on light using low energy beam doses of less than 0.1 nA/cm2. Thus layer composition control during the growth of nitride thin films such as GaN and InN will be aided.
Small Business Information at Submission:
Principal Investigator:J. Albert Schultz
2472 Bolsover, Suite 255 Houston, TX 77005
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