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Novel Pulsed Nitrogen Source Diagnostic for GaN Thin Film Stoichiometry Control

Award Information

Agency:
Department of Defense 		Branch:
Air Force 		Award ID:
32300 		Program Year/Program:
1997 / SBIR
Agency Tracking Number:
32300 		Solicitation Year:
N/A 		Solicitation Topic Code:
N/A 		Solicitation Number:
N/A
Small Business Information
IONWERKS, INC.
3401 Louisiana St., Suite 355 HOUSTON, TX 77002
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1997
Title: Novel Pulsed Nitrogen Source Diagnostic for GaN Thin Film Stoichiometry Control
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $732,936.00
 

Abstract:

Good insitu tools exist for measuring temperatures and thickness during epitaxial thin film growth. In contrast, almost no technique gives information on surface elemental composition in real time. We propose an extremely simple experiment which can be performed with an ion source little more complex that a noble ion sputter gun. This technique can very accurately measure surface coverages of light elements on heavy or heavy elements on light using low energy beam doses of less than 0.1 nA/cm2. Thus layer composition control during the growth of nitride thin films such as GaN and InN will be aided.

Principal Investigator:

J. Albert Schultz
7135229880

Business Contact:

Small Business Information at Submission:

Ionwerks
2472 Bolsover, Suite 255 Houston, TX 77005

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No