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Semiconductor Microbolometer Room Temperature Infrared Detectors
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 1
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Fiscal Year: 2002Title: Semiconductor Microbolometer Room Temperature Infrared DetectorsAgency / Branch: DOD / ARMYContract: DAAB07-02-C-J207Award Amount: $119,666.00
Abstract:
"ITN Energy Systems, Inc. proposes the development of microbolometer room temperature infrared detectors using plasma enhanced chemical vapor deposition (PECVD) growth of silicon or silicon germanium alloys. This Phase I contract will see the demonstrationof PECVD deposited semiconductors with improved properties for microbolometer applications, especially reduced 1/f noise. Phase I will involve a parametric study of process conditions that yield a wide range of silicon film properties ranging fromamorphous to microcrystalline. Additional studies will examine silicon germanium alloys. Silicon micromachining techniques will be used in Phase II to produce sensor elements on an air bridge to enhance the sensitivity. The major goal of the proposed workis the development of room temperature detector arrays for the 3-5 and 8-12 micron wavelength bands. Affordable room temperature infrared detector arrays will have wide applicability in military night vision systems, as well as enabling wide spread civilian applications such as automotive night driving aids, security monitoring, and fire fighting."Small Business Information at Submission:Itn Energy Systems, Inc.
8130 Shaffer Pkwy Littleton, CO 80127EIN/Tax ID: 841263359DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: Department of Defense |
Branch: Army |
Award ID: 58024 |
Program Year/Program: 2002 / SBIR |
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Agency Tracking Number: A012-1702 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |