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High Temperature Silicon Carbide (SiC) Gate Driver

Award Information

Department of Defense
Award ID:
Program Year/Program:
2010 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
ARMY 10-132
Solicitation Number:
Small Business Information
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 1
Fiscal Year: 2010
Title: High Temperature Silicon Carbide (SiC) Gate Driver
Agency / Branch: DOD / ARMY
Contract: W56HZV-11-C-0038
Award Amount: $69,995.00


The objective of this proposal is to develop and commercialize a high temperature gate driver for silicon carbide (SiC) FET switches to enable the development of the next generation of high-efficiency, high-power-density power converters. At the conclusion of Phase I, Arkansas Power Electronics International, Inc. (APEI, Inc.) will design and fabricate a high temperature (250 oC) gate driver utilizing discrete SiC circuitry and high temperature silicon-on-insulator (HTSOI) ASICs with off chip planar magnetic isolation. These designs will then be transitioned into an all SiC IC process in Phase II. APEI, Inc. has already developed a discrete HTSOI/SiC based gate driver which will meet most of the electrical needs of this program. This Phase I will focus on enhancing the features of APEI, Inc.'s gate driver technology, and provide a development path for implementing the technology in an all SiC IC. APEI, Inc. will commercialize the full gate driver (ICs, transformers, packaging, etc.) into military platforms through our prime defense partners at the conclusion of Phase II.

Principal Investigator:

Roberto M. Schupbach
Chief Technology Officer

Business Contact:

Sharmila Mounce
Business Operations Manag
Small Business Information at Submission:

Arkansas Power Electronics International, Inc.
535 W. Research Center Blvd., Suite 209 Fayetteville, AR 72701

EIN/Tax ID: 710810115
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No