Large Area Hydride Vapor Phase Epitaxy of Gallium Nitride
Agency / Branch:
DOD / MDA
High-performance GaN-based devices, such as microwave transistors, laser diodes and light emitting diodes have been demonstrated on sapphire and silicon carbide substrates, Gallium nitride substrates are expected to further improve the performance of thesedevices due to close lattice and thermal expansion match with GaN-based device structures. The development of a low defect density GaN substrate will result in improved properties of epitaxial GaN films, and subsequently will improve the performance ofFaN-based devices. Moving to wafer size larger than 2
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KYMA TECHNOLOGIES, INC.
8829 Midway West Road Raleigh, NC 27613
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