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Large Area Hydride Vapor Phase Epitaxy of Gallium Nitride

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
47629
Program Year/Program:
2001 / SBIR
Agency Tracking Number:
00-1141
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Kyma Technologies, Inc.
8829 Midway West Road Raleigh, NC -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2001
Title: Large Area Hydride Vapor Phase Epitaxy of Gallium Nitride
Agency / Branch: DOD / MDA
Contract: N00014-01-C-0169
Award Amount: $600,000.00
 

Abstract:

High-performance GaN-based devices, such as microwave transistors, laser diodes and light emitting diodes have been demonstrated on sapphire and silicon carbide substrates, Gallium nitride substrates are expected to further improve the performance of thesedevices due to close lattice and thermal expansion match with GaN-based device structures. The development of a low defect density GaN substrate will result in improved properties of epitaxial GaN films, and subsequently will improve the performance ofFaN-based devices. Moving to wafer size larger than 2

Principal Investigator:

Drew Hanser
Director of Business Deve
9197898889
hanser@kymatech.com

Business Contact:

Edward Pupa
President and CEO
9197898880
epupa@kymatech.com
Small Business Information at Submission:

KYMA TECHNOLOGIES, INC.
8829 Midway West Road Raleigh, NC 27613

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No