Advanced Gallium Nitride Microelectronic Devices Produced on Gallium Nitride Substrates
Agency / Branch:
DOD / MDA
Kyma Technologies, Inc. will demonstrate high-performance gallium nitride (GaN) microelectronic devices for X-band radar applications using single crystal semi-insulating GaN substrates. FETs for power amplifiers will benefit from lower defects resulting from growth on a native GaN substrate. The thermal conductivity of the GaN substrates will be characterized and device structures will be modeled and simulated to evaluate the impact of the substrate thermal conductivity on the electrical performance of the device. With these approaches and device improvements, advances in device performance, efficiency, and reliability will be achieved.
Small Business Information at Submission:
KYMA TECHNOLOGIES, INC.
8829 Midway West Road Raleigh, NC 27617
Number of Employees: