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Manufacturng Process for Production of Doped GaN Crystals

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
64218
Program Year/Program:
2003 / SBIR
Agency Tracking Number:
031-1204
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Kyma Technologies, Inc.
8829 Midway West Road Raleigh, NC -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2003
Title: Manufacturng Process for Production of Doped GaN Crystals
Agency / Branch: DOD / MDA
Contract: F3361503M5434
Award Amount: $70,000.00
 

Abstract:

Kyma Technologies will use its proprietary manufacturing technique for growth of bulk GaN doped substrates. We propose to develop gallium nitride (GaN) substrates with n- and p- type dopants for device fabrication. Attempts to grow low defect densitygallium nitride (GaN) thin films on substrates such as sapphire and silicon carbide (SiC) have had limited success. As such, homoepitaxial GaN thin film growth is of great interest. GaN wafers manufactured by Kyma Technologies will be used as the seed forgrowing doped GaN crystals. Doped GaN wafers will be useful in developing various types of microelectronic and optoelectronic devices. The limiting factors in many high performance applications based on GaN and related materials can be attributeddirectly to material defects in epitaxially grown layers. The development of a low defect density doped GaN substrate will result in improved properties of epitaxial GaN films, and subsequently will improve the performance of GaN-based devices. Achievinglow defect density, free standing GaN layers will enable many of these technologies to be commercialized. Single crystal gallium nitride will be the future building block for many commercial devices. Low defect density gallium nitride films will benefitmany microelectronic and optoelectronic devices. This material will lead to the commercialization of blue lasers in data storage and solid state white LED lighting. Homoepitaxial growth of gallium nitride on single crystal gallium nitride substrates willresult in improved device performance such as increased lifetime and brightness in optoelectronics and increase power and frequency in microelectronic devices.

Principal Investigator:

Drew Hanser
Director of Crystal Growt
9197898880
hanser@kymatech.com

Business Contact:

Edward Pupa
President and CEO
9197898880
epupa@kymatech.com
Small Business Information at Submission:

KYMA TECHNOLOGIES, INC.
8829 Midway West Road Raleigh, NC 27617

EIN/Tax ID: 562089207
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No