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Fabrication of GaN Schottky Diode Power Rectifiers on GaN Substrates Using…

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
69421
Program Year/Program:
2004 / STTR
Agency Tracking Number:
B2-0552
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Kyma Technologies, Inc.
8829 Midway West Road Raleigh, NC -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2004
Title: Fabrication of GaN Schottky Diode Power Rectifiers on GaN Substrates Using Advanced Metal Contacts
Agency / Branch: DOD / MDA
Contract: W9113M-04-C-0082
Award Amount: $0.00
 

Abstract:

The Phase II STTR will demonstrate the device operation of a GaN Schottky diode power rectifier. Kyma Technologies, Inc. will collaborate with investigators at Auburn University and North Carolina State University for materials growth/characterization and device fabrication/testing. The fabrication of a conventional Schottky diode relies on heteroepitaxy on lattice- and thermal-mismatched foreign substrates that generate a high concentration of defects which deteriorate the performance of the diode operation. The revolutionary route to solve this problem is to use homoepitaxy to create high quality GaN epilayers, which has not been possible due to the unavailability of native GaN wafers. Utilizing a back-side ohmic contact developed during the Phase I STTR program, a "vertical" Schottky diode structure with reduced threading dislocations can be fabricated. The Schottky diode power rectifier will be fabricated on Kyma's conductive single crystal GaN wafers. High resistivity GaN epilayers will be deposited on the wafer via molecular beam epitaxy using ammonia as a nitrogen source, followed by the formation of p+ guard ring regions via ion implantation. The top Schottky and bottom ohmic contact will be prepared on top-side epilayer and back-side N-face GaN wafer, respectively. The electronic properties of the Schottky diode will be characterized and the device structure will be optimized.

Principal Investigator:

N. M. Williams
Director of GaN
9197898880
williams@kymatech.com

Business Contact:

Edward Pupa
President/CEO
9197898880
epupa@kymatech.com
Small Business Information at Submission:

KYMA TECHNOLOGIES, INC.
8829 Midway West Road Raleigh, NC 27617

EIN/Tax ID: 562089207
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Research Institution Information:
Auburn University
Department of Physics, 309 Allison Laboratory
Auburn, AL 36849
Contact: Minseo Park
Contact Phone: (334) 844-4270
RI Type: Nonprofit college or university