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Homoepitaxial GaN-based Devices for RF Electronics

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
82188
Program Year/Program:
2007 / SBIR
Agency Tracking Number:
F071-223-1964
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Kyma Technologies, Inc.
8829 Midway West Road Raleigh, NC -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2007
Title: Homoepitaxial GaN-based Devices for RF Electronics
Agency / Branch: DOD / USAF
Contract: FA8650-07-M-1152
Award Amount: $100,000.00
 

Abstract:

In this Phase I proposal, Kyma Technologies will examine the epi properties and device performance of homoepitaxial GaN-based device layers grown on semi-insulating GaN substrates, targeting metrics that will help characterize performance at high frequency and correlating device performance with material properties. High frequency GaN devices will theoretically benefit from a lower dislocation density through improved thermal performance and improved dispersion performance. Device performance improvements will target high efficiency and bandwidth at high frequency, and the Phase I effort will assess the feasibility of the approach by measuring initial device performance and showing trends for high frequency device performance.

Principal Investigator:

Drew Hanser
CTO & VP Business Development
9197898880
hanser@kymatech.com

Business Contact:

Keith Evans
CEO & President
9197898880
evans@kymatech.com
Small Business Information at Submission:

KYMA TECHNOLOGIES, INC.
8829 Midway West Road Raleigh, NC 27617

EIN/Tax ID: 562089207
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No