Manufacturing Process for Semi-insulating 4" Diameter GaN Substrates
Agency / Branch:
DOD / MDA
The overall objective of this Phase II effort is to implement a HVPE crystal growth tool for large diameter GaN crystals suitable for 4" diameter substrates. Using this new crystal growth platform, Kyma will optimize its design and operation to develop a manufacturing process for growing high quality, low defect density semi-insulating GaN substrates. CFD modeling will be used extensively to identify the optimal system design and growth parameters. Bulk semi-insulating GaN substrates will be produced by slicing wafers from a 4" boule.
Small Business Information at Submission:
KYMA TECHNOLOGIES, INC.
8829 Midway West Road Raleigh, NC 27617
Number of Employees: