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Advanced Nitride Heterostructures for X-Band GaN HEMTs

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
91552
Program Year/Program:
2009 / SBIR
Agency Tracking Number:
B083-024-0198
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Kyma Technologies, Inc.
8829 Midway West Road Raleigh, NC -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2009
Title: Advanced Nitride Heterostructures for X-Band GaN HEMTs
Agency / Branch: DOD / MDA
Contract: W9113M-09-C-0124
Award Amount: $99,902.00
 

Abstract:

Kyma Technologies together with the subcontractor at Virginia Commonwealth University, aim to develop high-performance AlInN/GaN based high electron mobility transistor (HEMT), operating in the X-band frequency region. We intent to employ a novel technical approach, which examines both large-scale semi-insulating GaN templates and high-quality semi-insulating native GaN substrates; benefits from optimization of device design by introducing additional spacer(s) and employs strain-compensation heterostructure engineering to enable the development ultra-high device performance. Phase I focuses on growth development of high-quality pseudomorphic AlInN/GaN strain-free heterostructures and detailed evaluation of material properties and lays the foundation for Phase II wherein ultra-high performance X-band HEMTs will be developed.

Principal Investigator:

Tanya Paskova
Chief Scientist
9197898880
paskova@kymatech.com

Business Contact:

Carole Davis
Contracts Administrator
9197898880
davis@kymatech.com
Small Business Information at Submission:

KYMA TECHNOLOGIES, INC.
8829 Midway West Road Raleigh, NC 27617

EIN/Tax ID: 562089207
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No