HVPE-grown InGaN Materials for Aggressive Cost Reduction of Solid State Lighting Technologies
Agency / Branch:
DOD / DARPA
Kyma Technologies will develop InGaN growth technologies using the hydride vapor phase epitaxy (HVPE) process, and will combine this with a proven GaN epitaxial growth technology to enable aggressive cost reduction for InGaN-based devices. This approach will enable a reduction in the required MOCVD growth steps in the fabrication of LEDs for solid state lighting, leading to a significant reduction in the costs of epitaxy of the LED device structure. In Phase I, Kyma will demonstrate high quality InGaN-based epitaxial layers via HVPE using a novel HVPE growth platform.
Small Business Information at Submission:
KYMA TECHNOLOGIES, INC.
8829 Midway West Road Raleigh, NC 27617
Number of Employees: