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HVPE-grown InGaN Materials for Aggressive Cost Reduction of Solid State…

Award Information

Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Award ID:
91832
Program Year/Program:
2009 / SBIR
Agency Tracking Number:
08SB2-0809
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Kyma Technologies, Inc.
8829 Midway West Road Raleigh, NC -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2009
Title: HVPE-grown InGaN Materials for Aggressive Cost Reduction of Solid State Lighting Technologies
Agency / Branch: DOD / DARPA
Contract: W31P4Q-09-C-0389
Award Amount: $98,999.00
 

Abstract:

Kyma Technologies will develop InGaN growth technologies using the hydride vapor phase epitaxy (HVPE) process, and will combine this with a proven GaN epitaxial growth technology to enable aggressive cost reduction for InGaN-based devices. This approach will enable a reduction in the required MOCVD growth steps in the fabrication of LEDs for solid state lighting, leading to a significant reduction in the costs of epitaxy of the LED device structure. In Phase I, Kyma will demonstrate high quality InGaN-based epitaxial layers via HVPE using a novel HVPE growth platform.

Principal Investigator:

Drew Hanser
CTO & VP Business Development
9197898880
hanser@kymatech.com

Business Contact:

Carole Davis
Contracts Administrator
9197898880
davis@kymatech.com
Small Business Information at Submission:

KYMA TECHNOLOGIES, INC.
8829 Midway West Road Raleigh, NC 27617

EIN/Tax ID: 562089207
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No