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Development of GaN Substrates for High Power and M

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
92144
Program Year/Program:
2009 / SBIR
Agency Tracking Number:
A092-045-1922
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Kyma Technologies, Inc.
8829 Midway West Road Raleigh, NC -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2009
Title: Development of GaN Substrates for High Power and M
Agency / Branch: DOD / ARMY
Contract: W911QX-10-C-0039
Award Amount: $69,678.00
 

Abstract:

Kyma Technologies proposes to document and model commonly observed GaN defect structures in device performance simulations to determine the acceptable level of defects to yield a Schottky diode appropriate for typical 600 V market specifications. Bulk GaN substrates have the potential to enable unprecedented GaN Schottky diode performance - better than Si and SiC devices - yet the bulk GaN materials must first be better understood and improved. By understanding which defects must be reduced or eliminated, we can understand the primary element in the critical path towards cost-effective high-yield high-performance Schottky diode device manufacturing. To such an end, Kyma has assembled a world class team of device and materials experts. In Phase I, a significant modeling effort will take place to determine the most important defects to reduce, mitigate or eliminate totally. Phase II will include a major device effort with the ultimate goal of producing device yields over a 2" diameter round wafer of greater than 50%.

Principal Investigator:

Gregory Mulholland
Director of Engineering
9197898880
mulholland@kymatech.com

Business Contact:

Carole Davis
Accounting and Govt Contracts
9197898880
davis@kymatech.com
Small Business Information at Submission:

KYMA TECHNOLOGIES, INC.
8829 Midway West Road Raleigh, NC 27617

EIN/Tax ID: 562089207
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No