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GROWTH OF EPITAXIAL OXIDE FILMS ON SILICON

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
21581
Program Year/Program:
1993 / SBIR
Agency Tracking Number:
21581
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Lawrence Semiconductor Research Laboratory, Inc.
2300 West Huntington Drive Tempe, AZ 85282 0313
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1993
Title: GROWTH OF EPITAXIAL OXIDE FILMS ON SILICON
Agency: NSF
Contract: N/A
Award Amount: $50,000.00
 

Abstract:

THE RESARCH DEMONSTRATES EPITAXIAL GROWTH, BY LASER ABLATION IN A UHV VACUUM SYSTEM OF HIGH QUALITY, INSULATING OXIDE FILMS ONTO HEATED SINGLE CRYSTAL SILICON SUBSTRATES, FOLLOWED BY CVD EPITAXIAL GROWTH OF SILICON ONTO THE INSULATING OXIXDE. THE RESEA CHERS ARE FOCUSING ON MGO, CEO2, AND PRO2 AS THE CANDIDATE EPITAXIAL INSULATING LAYERS. BOTH THE LASER ABLATED EPITAXIAL OXIDE FILMS AND THE CVD EPITAXIAL SILICON FILMS ARE CHARACTERIZED FOR CRYSTAL QUALITY AND ELECTRICAL PROPERTIES. CRYSTAL QUALITY IS MONITORED IN SITU DURING GROWTH BY REFLECTION HIGH ENERGY ELECTRON DIFFRACTION. THE GOAL FOR THIS WORK IS TO ENABLE A SILICON-ON-INSULATOR STRUCTURE IN WHICH THE INSULTOR IS GROWN EPITAXIALLY.

Principal Investigator:

Mcdonald Robinson
6024382300

Business Contact:

Small Business Information at Submission:

Lawrence Semiconductor
2300 W Huntington Dr Tempe, AZ 85282

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No