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60 GHZ IMPATT DIODES

Award Information

Agency:
Department of Defense 		Branch:
Air Force 		Award ID:
8812 		Program Year/Program:
1988 / SBIR
Agency Tracking Number:
8812 		Solicitation Year:
N/A 		Solicitation Topic Code:
N/A 		Solicitation Number:
N/A
Small Business Information
Lnr Communications Inc.
180 Marcus Blvd Hauppauge, NY 11788
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1988
Title: 60 GHZ IMPATT DIODES
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $49,046.00
 

Abstract:

GALLIUM ARSENIDE (GAAS) IMPATT DIODES ARE THE PRIMARY CANDIDATES FOR USE AS THE ACTIVE ELEMENT IN 60 GHZ SOLID STATE COMBINATORIAL (OR ACTIVE APERTURE) TRANSMIT POWER AMPLIFIERS FOR LONG RANGE WIDEBAND INTERSATELLITE COMMUNICATION LINKS. IN THIS APPLICATION A MULTIPLICITY OF IDENTICAL 60 GHZ IMPATT DIODES (AND "BUILDING BLOCK" AMPLIFIER STAGES) ARE REQUIRED, EACH OF MAXIMUM ACHIEVABLE EHF OUTPUT POWER AND DC-EHF CONVERSION EFFICIENCY, IN ORDER TO MINIMIZE THE COMPLEXITY AND PRIMARY POWER CONSUMPTION AND ENHANCE THE RELIABILITY OF THE OVERALL TRANSMITTER. ACCORDINGLY, LNR PROPOSES A PHASE I STUDY PROGRAM TO INVESTIGATE AND PERFORM TRADEOFF ANALYSES ON ALTERNATIVE 60 GHZ GAAS IMPATT DEVICE DESIGNS, WITH RESPECT TO SUCH ASPECTS AS EPITAXIAL GAAS DOPING PROFILE AND GROWTH TECHNIQUE, IMPATT DIODE CHIP AND PACKAGING GEOMETRY, AND EMBEDDING CONFIGURATION AND THEIR RESPECTIVE IMPACT ON RF PERFORMANCE. THE PROPOSED STUDY WILL CULMINATE IN A PRELIMINARY IMPATT DIODE PERFORMANCE SPECIFICATION AND A TASK DEFINITION FOR A PHASE II PROOF OF CONCEPT (POC) IMPATT DIODE AND AMPLIFIER IMPLEMENTATION EFFORT.

Principal Investigator:

J de gruyl
5162737111

Business Contact:

Small Business Information at Submission:

Lnr Communications Inc
180 Marcus Blvd Hauppauge, NY 11788

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No