Corrosion Prevention & Health Monitoring through Impressed Current Cathodic Protection inside Pipe Systems via Flange-Anode Gasket

Not Available We are proposing the research and development of a non-destructive-read-out ferroelectric gate (NDRO) memory. In a ferroelectric gate memory, ferroelectric thin films like strontium bismuth tantalate are used as the gate dielectric. In order to prevent the inter-diffusion of the ferroelectric thin film into the silicon substrate, thin buffer layers like zirconium oxide and yttrium oxide can be used as a diffusion barrier. The thickness of the buffer layer and the ferroelectric thin film will be optimized to minimize charge injection at the silicon-insulator interface and maximize ferroelectric charge retention. The metal-ferroelectric-insulator-semiconductor structures (MFIS) will be analyzed structurally using x-ray diffraction and transmission electron microscopy. The electrical characteristics of the MFIS structures will be analyzed by capacitance-voltage (C-V), Polarization vs Electric field (P-E) and Current-voltage measurements. Ferroelectric gate field effect transistors (MFISFET) will be fabricated under optimized process conditions. The devices will be tested for memory window, memory retention and radiation hardness.