Maskless Lithography for Fabrication of Microelectronics with 100 nm Features
Agency / Branch:
DOD / DARPA
We propose to investigate the feasibility of achieving a throughput of at least one 200 mm diameter wafer per hour, while incorporating a sub-200nm wavelength source into a maskless lithography system of the Zone-Plate-Array Lithography architecture. We will evaluate sources at 193, 157, 121, 13 and 4.5 nm, as well as a variety of sub-200 nm lamp sources.
Small Business Information at Submission:
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