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A UNIQUE AND NEW PLASMA ASSISTED DEPOSITION TECHNIQUE UTILIZING IN-SITU…

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
17351
Program Year/Program:
1992 / SBIR
Agency Tracking Number:
17351
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Materials & Electrochemical Research (MER) Corp.
7960 S. Kolb Rd. Tucson, AZ 85756-9237
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1992
Title: A UNIQUE AND NEW PLASMA ASSISTED DEPOSITION TECHNIQUE UTILIZING IN-SITU RENUCLEATION
Agency: NSF
Contract: N/A
Award Amount: $50,000.00
 

Abstract:

NEW TECHNOLOGIES FOR PRODUCING USEFUL PRODUCTS WITH ENGINEERED MICROSTRUCTURES AND PROPERTIES FOR OPTIMIZED MECHANICAL PERFORMANCE CREATES AN INSATIABLE DEMAND FOR MATERIALS PROCESSING AND MANUFACTURING. PLASMA ASSISTED CHEMICAL VAPOR DEPOSITIONS (PACVD) IS A NEW TECHNIQUE FOR MATERIALS PROCESSING THAT HAS THE CAPABILITY TO SUBSTANTIALLY ENHANCE DEPOSITION RATES. "WORKING" OF A DEPOSITION SURFACE CAN CAUSE CONTINUED RENUCLEATION TO PRODUCE A VERY FINE GRAINED DEPOSIT, DEFECT AND STRESS FREE THAT IS SMOOTH TO VIRTUALLY ANY THICKNESS WITH SUBSTANTIALLYIMPROVED MECHANICAL PROPERTIES. THIS PROGRAM PROPOSES TO DEVELOP A HIGH WATT DENSITY PLASMA CVD PROCESS COUPLED WITH CONTINUAL IN-SITU "WORKING" OF THE DEPOSITION SURFACE TO ACHIEVE EXTRORDINARILY HIGH DEPOSITION RATES IN A VERY FINE GRAINED STRESS FREE DEPOSITS WITH MECHANICAL PROPERTIES SUBSTANTIALLY GREATER THAN CONVENTIONAL MATERIALS. THE PROCESS WILL BE DEMONSTRATED WITH DIFFICULT TO FABRICATE REFRACTORY MATERIALS OF TUNGSTEN AND THE COVALENT BONDED CERAMICS OF SI3N4, SIC AND TIB2.

Principal Investigator:

Dr. J. C. Withers
6025741980

Business Contact:

Small Business Information at Submission:

Materials And Electrochemical
7960 South Kolb Rd Tucson, AZ 85706

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No