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DOPING OF CHEMICALLY VAPOR DEPOSITED SILICON CARBIDE TO ENHANCE THERMAL…

Award Information

Agency:
Department of Energy
Branch:
N/A
Award ID:
21115
Program Year/Program:
1994 / SBIR
Agency Tracking Number:
21115
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Materials & Electrochemical Research (MER) Corp.
7960 S. Kolb Rd. Tucson, AZ 85756-9237
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1994
Title: DOPING OF CHEMICALLY VAPOR DEPOSITED SILICON CARBIDE TO ENHANCE THERMAL CONDUCTIVITY
Agency: DOE
Contract: N/A
Award Amount: $600,000.00
 

Abstract:

SILICON CARBIDE-SILICON CARBIDE (SIC/SIC) COMPOSITES HOLD SIGNIFICANT PROMISE FOR USE IN FUSION ENERGY SYSTEMS. EVEN GREATER OPPORTUNITY EXITS IF THE THERMAL CONDUCTIVITY OF THE CHEMICALLY VAPOR INFILTRATED (CVI) MARIX COULD BE IMPROVED. IT HAS BEEN SHOWN THAT THE THERMAL CONDUCTIVITY OF HOT PRESSED SIC CAN BE SIGNIFICANTLY ENHANCED USING SELECT DOPANTS. THIS PHASE I PROGRAM WILL INVESTIGATE THE EFFECT OF SELECT DOPANTS ON THE THERMAL CONDUCTIVITY OF CHEMICALLY VAPOR DEPOSITED (CVD) SIC. THE DOPANTS WILL BE CODEPOSITED AND THEIR CONCENTRATION EFFECTS ON THE THERMAL CONDUCTIVITY OF CVD SIC WILL BE ESTABLISHED. ONE DOPANT WILL BE SELECTED AND FURTHER OPTIMIZED WITH THERMAL CONDUCTIVITY MEASURED TO 1200 DEGREES CENTIGRADE. FEASIBILITY WILL BE DEMONSTRATED IF THE THERMAL CONDUCTIVITY OF A CVI SIC MATRIX CAN BE SIGNIFICANTLY ENHANCED THROUGH CODEPOSITION OF DOPANTS.

Principal Investigator:

Mr Prakash Arya
6025741980

Business Contact:

Small Business Information at Submission:

Materials And Electrochemical
7960 S Kolb Rd Tucson, AZ 85706

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No