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Development of a New Method for Fabricating SiC-On-Insulator Compliant Substrate

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
19657
Program Year/Program:
1998 / SBIR
Agency Tracking Number:
19657
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
MATERIALS TECHNOLOGIES CORPORATION
57 Maryanne Drive Monroe, CT -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1998
Title: Development of a New Method for Fabricating SiC-On-Insulator Compliant Substrate
Agency / Branch: DOD / MDA
Contract: N/A
Award Amount: $650,000.00
 

Abstract:

SURVEILLANCE IN THE INFRA-RED PART OF THE ELECTROMAGNETIC SPECTRUM DEMANDS INNOVATIVE CONCEPTS TO DESIGN QUANTUM WELL (QW) DETECTORS FOR WAVELENGTH BEYOND 12 UM. THE REQUIREMENT FOR LOW TUNNELING CURRENT AND SUPERIOR TRANSPORT PROPERTIES MAKE InAs-In(x)Ga(1-x)Sb, A TYPE II SUPERLATTICE, A SUITABLE CANDIDATE FOR INFRA-RED APPLICATION. STRAIN INDUCED BAND GAP VARIATION AND WAVELENGTH CONTROLLABILITY USING SUPERLATTICE PERIOD ENABLES ONE TO USE THIS SYSTEM OVER A WAVELENGTH RANGE OF 4-24 UM. A REDUCTION IN SHOT NOISE USING DOUBLE-PERIODIC SUPERLATTICE WILL ENABLE TO REALIZE A LARGE SIGNAL TO NOISE RATIO. MOREOVER, THE SCHEME EMPLOYED TO REDUCE SHOT NOISE WILL RESULT IN AN ENHANCED ABSORPTION COEFFICIENT MAKING POSSIBLE THE REALIZATION OF A DETECTOR WITH A LARGE SIGNAL TO NOISE RATIO.

Principal Investigator:

John Pike
2038743100

Business Contact:


0
Small Business Information at Submission:

Materials Technologies Corp
57 Maryanne Drive Monroe, CT 06468

EIN/Tax ID: 061200419
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No