USA flag logo/image

An Official Website of the United States Government

High-Power Pulsed Laser Diode Driver Utilizing Low Tempature Growth GaAs Power…

Award Information

Agency:
Department of Defense
Branch:
Air Force
Award ID:
28130
Program Year/Program:
1995 / SBIR
Agency Tracking Number:
28130
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Mellwood Laboratorytories,
2225 Carberry Dr. West Lafayette, IN 47906
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1995
Title: High-Power Pulsed Laser Diode Driver Utilizing Low Tempature Growth GaAs Power Switches
Agency / Branch: DOD / USAF
Contract: N/A
Award Amount: $77,275.00
 

Abstract:

The proposed research entails the development of a pulsed power driver capable of producing an electrical pulse with peak currents greater than 200 amps, peak powers greater than 200 kilowatts, and repetition rates greater than 10 kHz. MellWood Laboratories, Inc. has developed an entirely solid state system to create these high power pulses. The switching device consists of a monolithically integrated light emitting diode (LED) and a high power metal-semiconductor-metal (MSM) photo-switch. The integrated LED optically switches the MSM photoconductor. The vertical integration of an A1GaAs LED with an annealed low temperature growth A1GaAs MSM photoconductive switch allows a new class of high power devices to be developed. This high-power, compact, solid state pulsed power driver will be utilized to drive pulsed laser diodes for such applications as LIDAR.

Principal Investigator:

Eric S. Harmon
3174263662

Business Contact:

Small Business Information at Submission:

Mellwood Laboratorytories,
1291 Cumberlamd Ave. Suite E West Lafayette, IN 47906

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No