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Company Information:

Company Name: Microcirc Assoc.
City: Newport Beach
State: CA
Zip+4: 92663
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: (949) 548-5214

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $233,998.00 4
SBIR Phase II $1,236,000.00 2

Award List:

INTELLIGENT SYSTEMS

Award Year / Program / Phase: 1983 / SBIR / Phase I
Agency: NSF
Principal Investigator: Dr. t.p. haraszti , PRINCIPAL INVESTIGATOR
Award Amount: $34,000.00
Abstract:
Novel associative memory circuits and processing elements for future parallel data processing and computing systems are proposed forresearch and development. these vlsi circuits will feature high density, high performance, radiation hardness and wide operating temperature range. the most promising… More

INTELLIGENT FAULT-TOLERANT MEMORIES FOR MASS STORAGE DEVICES

Award Year / Program / Phase: 1985 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Dr Tegze P Haraszti
Award Amount: $50,000.00

INTELLIGENT FAULT-TOLERANT MEMORIES FOR MASS STORAGE DEVICES

Award Year / Program / Phase: 1986 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Dr Tegze P Haraszti
Award Amount: $486,000.00
Abstract:
Novel intelligent fault-tolerant semiconductor memory circuits for future mass data storage devices are proposed for research and development. the intelligent features will include self-test, selfrepair, internal bookkeeping, self-organization and security keyed operation. the fault-tolerancy will… More

FAULT-TOLERANT INTELLIGENT STATIC RANDOM ACCESS MEMORY

Award Year / Program / Phase: 1990 / SBIR / Phase I
Agency / Branch: DOD / MDA
Principal Investigator: Dr T P Haraszti
Award Amount: $50,000.00

Radiation-Hardened Synchronous SRAM

Award Year / Program / Phase: 2001 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: T.p. Haraszti, President
Award Amount: $99,998.00
Abstract:
Novel radiation-hardened synchronous pipelined multibank fault-tolerant static-random-access-memory (SRAM) will be developed. The SRAM will combine high speed performanceand radiation-hardness with high packing density, low power consumption andmanufacturability at reasonable costs. Unique… More

Radiation-Hardened High-Speed Synchronous SRAM with Built-in Fault Tolerance

Award Year / Program / Phase: 2002 / SBIR / Phase II
Agency / Branch: DOD / USAF
Principal Investigator: Tegze P.Haraszti, President
Award Amount: $750,000.00
Abstract:
"The objective of this project is to produce complementary-metal-oxide-semiconductor (CMOS) static-random-access memories (SRAMs) which combine very high operational speed, radiation hardness, amenability to emdedded silicon-on-chip (SOC) applications, highpacking density, low power consumption and… More