Novel associative memory circuits and processing elements for future parallel data processing and computing systems are proposed forresearch and development. these vlsi circuits will feature high density, high performance, radiation hardness and wide operating temperature range. the most promising… More

Novel intelligent fault-tolerant semiconductor memory circuits for future mass data storage devices are proposed for research and development. the intelligent features will include self-test, selfrepair, internal bookkeeping, self-organization and security keyed operation. the fault-tolerancy will… More

Novel radiation-hardened synchronous pipelined multibank fault-tolerant static-random-access-memory (SRAM) will be developed. The SRAM will combine high speed performanceand radiation-hardness with high packing density, low power consumption andmanufacturability at reasonable costs. Unique… More

"The objective of this project is to produce complementary-metal-oxide-semiconductor (CMOS) static-random-access memories (SRAMs) which combine very high operational speed, radiation hardness, amenability to emdedded silicon-on-chip (SOC) applications, highpacking density, low power consumption and… More