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Company Information:

Company Name:
Microcirc Assoc.
Address:
102 Scholtz Plaza, No.238
Newport Beach, CA 92663
Phone:
(949) 548-5214
URL:
N/A
EIN:
N/A
DUNS:
153841499
Number of Employees:
9
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $233,998.00 4
SBIR Phase II $1,236,000.00 2

Award List:

INTELLIGENT SYSTEMS

Award Year / Program / Phase:
1983 / SBIR / Phase I
Award Amount:
$34,000.00
Agency:
NSF
Principal Investigator:
Dr. t.p. haraszti , PRINCIPAL INVESTIGATOR
Abstract:
Novel associative memory circuits and processing elements for future parallel data processing and computing systems are proposed forresearch and development. these vlsi circuits will feature high density, high performance, radiation hardness and wide operating temperature range. the most promising… More

INTELLIGENT FAULT-TOLERANT MEMORIES FOR MASS STORAGE DEVICES

Award Year / Program / Phase:
1985 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr Tegze P Haraszti
Abstract:
N/a

INTELLIGENT FAULT-TOLERANT MEMORIES FOR MASS STORAGE DEVICES

Award Year / Program / Phase:
1986 / SBIR / Phase II
Award Amount:
$486,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Dr Tegze P Haraszti
Abstract:
Novel intelligent fault-tolerant semiconductor memory circuits for future mass data storage devices are proposed for research and development. the intelligent features will include self-test, selfrepair, internal bookkeeping, self-organization and security keyed operation. the fault-tolerancy will… More

FAULT-TOLERANT INTELLIGENT STATIC RANDOM ACCESS MEMORY

Award Year / Program / Phase:
1990 / SBIR / Phase I
Award Amount:
$50,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Dr T P Haraszti
Abstract:
N/a

Radiation-Hardened Synchronous SRAM

Award Year / Program / Phase:
2001 / SBIR / Phase I
Award Amount:
$99,998.00
Agency / Branch:
DOD / USAF
Principal Investigator:
T.p. Haraszti, President
Abstract:
Novel radiation-hardened synchronous pipelined multibank fault-tolerant static-random-access-memory (SRAM) will be developed. The SRAM will combine high speed performanceand radiation-hardness with high packing density, low power consumption andmanufacturability at reasonable costs. Unique… More

Radiation-Hardened High-Speed Synchronous SRAM with Built-in Fault Tolerance

Award Year / Program / Phase:
2002 / SBIR / Phase II
Award Amount:
$750,000.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Tegze P.Haraszti, President
Abstract:
"The objective of this project is to produce complementary-metal-oxide-semiconductor (CMOS) static-random-access memories (SRAMs) which combine very high operational speed, radiation hardness, amenability to emdedded silicon-on-chip (SOC) applications, highpacking density, low power consumption and… More