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Thin-Film Deposition of Advanced DRAM and FRAM Memory Device Structures

Award Information

Department of Defense
Missile Defense Agency
Award ID:
Program Year/Program:
2001 / SBIR
Agency Tracking Number:
Solicitation Year:
Solicitation Topic Code:
Solicitation Number:
Small Business Information
nGimat Co.
1824 Willow Trail Parkway Norcross, GA -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Phase 1
Fiscal Year: 2001
Title: Thin-Film Deposition of Advanced DRAM and FRAM Memory Device Structures
Agency / Branch: DOD / MDA
Contract: DTRA01-01-P-0151
Award Amount: $64,990.00


Herein we propose to apply the proprietary Combustion CVD (CCVD) process to the manufacture of novel structures for dynamic access memory (DRAM) and nonvolatile, ferroelectric random access memory (FRAM) devices. The CCVD process is a thin-film depositiontechnique that operates in the open-atmosphere using low-cost equipment and precursors. It has already demonstrated its ability to epitaxially deposit advanced materials of high permittivity (e.g. barium strontium titanate and lead zirconium titanate).These perovskites have the potenitial to allow for high-performance DRAM and FRAM devices. In addition, the non-silicon, single-crystal substrates used in the proposed work provide an innovative technical approach to demonstrate a new type ofsilicon-on-insulator integrated circuit device. In Phase I, we will optimize CCVD-deposited perovskite thin-films for the envisioned applications. This encompasses a systematic study of deposition parameters and film properties. Multi-layered, epitaxialfilms will be fabricated and fully tested. This will provide key design parameters and form the fundation for the next generation of DRAM and FRAM devices for both military and civilian applications.A novel structured Giga-bit DRAM with high dielectricson non-silicon based substrate will enable fast, high density, smaller, more robust, and reliable IC chips. Those advanced DRAM IC could be installed in control systems for a wide variety of applications in aerospace, naval, industrial and civilapplications. These devices may provide a new generation of DRAM, which is a promising candidate to realize 0.10 m DRAMs and beyond. This advanced DRAM could also satisfy the requirement of cell capacitance in ever shrinking cell size.

Principal Investigator:

Guang Cui

Business Contact:

Jeffrey Moore
Chief Operating Officer
Small Business Information at Submission:

5315 Peachtree Industrial Blvd Chamblee, GA 30341

EIN/Tax ID: 582089229
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No