An Official Website of the United States Government
Vertical-Cavity Surface-Emitting Laser Based on Nanostructured Active Material
- Small Business Information
-
Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 1
-
Fiscal Year: 2002Title: Vertical-Cavity Surface-Emitting Laser Based on Nanostructured Active MaterialAgency: NSFContract: 0128456Award Amount: $100,000.00
Abstract:
This Small Business Technology Transfer Research (STTR) Phase I Project will further develop a nanostructure technology for use as the active material of a fiber optic laser. Prior research has demonstrated that self-organized III-V semiconductor nanostructures grown on GaAs (gallium arsenide) substrate can operate as the gain region of a 1.3 micron wavelength laser, and that these structures are effective in realizing vertical-cavity surface-emitting lasers (VCSELs). 1.3 micron VCSELs are a key device for high speed fiber optic links for use in Ethernet and other metro access and metro applications. This project will have access to a high quality epitaxial growth facility with the capability to grow the III-V nanostructures and VCSEL mirrors and to develop a broad range of electronic and optoelectronic device materials.Small Business Information at Submission:MicroLink
6457 Howard Street Niles, IL 60714EIN/Tax ID:DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
|
Agency: National Science Foundation |
Branch: N/A |
Award ID: 57862 |
Program Year/Program: 2002 / SBIR |
|
Agency Tracking Number: 0128456 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |