Single Chip InGaP HBT for T/R modules
Agency / Branch:
DOD / USAF
A fully monolithically-integrated X-band T/R module using InGaP/GaAs-based HBTs (heterojunction bipolar transistors) for both the transmit and receive functions is proposed. A single device structure designed for both the transmit and receive function is proposed to simplify the design and to lower the cost. The focus in phase I is to realize a low noise figure in InGaP HBT technology.
Small Business Information at Submission:
6457 Howard Street Niles, IL 60714
Number of Employees: