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InP/GaAsSb HBT MMIC for W-Band

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
74422
Program Year/Program:
2005 / SBIR
Agency Tracking Number:
042368
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
MicroLink Devices
6457 Howard Street Niles, IL -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2005
Title: InP/GaAsSb HBT MMIC for W-Band
Agency: NASA
Contract: NNC05CA76C
Award Amount: $69,750.00
 

Abstract:

High-speed devices using InP play a critical role in the realization of power amplifiers for wireless and optical communication systems. Current gain cut-off frequencies in excess of 200 GHz have been demonstrated for InP HBTs, indicating the potential of these devices for use in high bandwidth communication systems and high-speed direct digital synthesizers. To achieve a higher output power and higher efficiency, InP HBT based on GaAsSb base layer is proposed in this research effort. This novel material technology offers the highest potential to achieve the highest output power and efficiency at W-band. We would like to achieve at least 1W of output power at W-band with at least an efficiency of 40%.

Principal Investigator:

Noren Pan
Principal Investigator
8475883001
noren_pan@mindspring.com

Business Contact:

Noren Pan
Business Official
8475883001
noren_pan@mindspring.com
Small Business Information at Submission:

MicroLink Devices
6457 Howard Street Niles, IL 60714

EIN/Tax ID: 043511752
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No