InGaP HBT Lift-Off for High Efficiency L-band T/R Module

Award Information

Agency: National Aeronautics and Space Administration	Branch: N/A	Award ID: 90686	Program Year/Program: 2009 / SBIR
Agency Tracking Number: 084998	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: MicroLink Devices
6457 Howard Street Niles, IL -
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Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No

Phase 1: Fiscal Year: 2009

Title: InGaP HBT Lift-Off for High Efficiency L-band T/R Module

Agency: NASA

Contract: NNX09CD87P

Award Amount: $100,000.00

Abstract:
This proposal addresses the need for the development of higher efficiency power amplifiers at L-band using GaAs HBT (heterojunction bipolar transistors) for pulsed mode radar applications. In this proposal we offer a novel approach for signifcantly improving the thermal characteristics of high power GaAs based HBTs. This work will be accomplished by the development of a high-yield, 4-inch epitaxial liftoff (ELO) technology accompanied by the bonding of the GaAs device wafer onto a diamond substrate. The power added efficiency is expected to be at least 65% with an improvement in power density by 50%.

Principal Investigator:
Noren Pan
Principal Investigator
8475883001
npan@mldevices.com

Business Contact:
Noren Pan
Business Official
8475883001
npan@mldevices.com

Small Business Information at Submission:

MicroLink Devices
6457 Howard Street Niles, IL 60714

EIN/Tax ID: 043511752

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No