InGaP HBT Lift-Off for High Efficiency L-band T/R Module
This proposal addresses the need for the development of higher efficiency power amplifiers at L-band using GaAs HBT (heterojunction bipolar transistors) for pulsed mode radar applications. In this proposal we offer a novel approach for signifcantly improving the thermal characteristics of high power GaAs based HBTs. This work will be accomplished by the development of a high-yield, 4-inch epitaxial liftoff (ELO) technology accompanied by the bonding of the GaAs device wafer onto a diamond substrate. The power added efficiency is expected to be at least 65% with an improvement in power density by 50%.
Small Business Information at Submission:
6457 Howard Street Niles, IL 60714
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