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InGaP HBT Lift-Off for High Efficiency L-band T/R Module

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
90686
Program Year/Program:
2009 / SBIR
Agency Tracking Number:
084998
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
MicroLink Devices
6457 Howard Street Niles, IL 60714-
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2009
Title: InGaP HBT Lift-Off for High Efficiency L-band T/R Module
Agency: NASA
Contract: NNX09CD87P
Award Amount: $100,000.00
 

Abstract:

This proposal addresses the need for the development of higher efficiency power amplifiers at L-band using GaAs HBT (heterojunction bipolar transistors) for pulsed mode radar applications. In this proposal we offer a novel approach for signifcantly improving the thermal characteristics of high power GaAs based HBTs. This work will be accomplished by the development of a high-yield, 4-inch epitaxial liftoff (ELO) technology accompanied by the bonding of the GaAs device wafer onto a diamond substrate. The power added efficiency is expected to be at least 65% with an improvement in power density by 50%.

Principal Investigator:

Noren Pan
Principal Investigator
8475883001
npan@mldevices.com

Business Contact:

Noren Pan
Business Official
8475883001
npan@mldevices.com
Small Business Information at Submission:

MicroLink Devices
6457 Howard Street Niles, IL 60714

EIN/Tax ID: 043511752
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No