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FLASH ANNELLING OF ION IMPLANTED DOPING PROFILES FOR HIGH PERFORMANCE X-BAND…

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
69
Program Year/Program:
1985 / SBIR
Agency Tracking Number:
69
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Microwave Monolithics Inc.
465 East Easy St Unit F Simi Valley, CA 93065
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Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1985
Title: FLASH ANNELLING OF ION IMPLANTED DOPING PROFILES FOR HIGH PERFORMANCE X-BAND GAAS POWER FETS
Agency / Branch: DOD / ARMY
Contract: N/A
Award Amount: $324,980.00
 

Abstract:

THIS PROGRAM WILL ADDRESS THE APPLICATION OF THE FLASH ANNEALING TECHNIQUE TO THE FABRICATION OF HIGH-PERFORMANCE ION IMPLANTED GAAS POWER FETS. THE DOPING PROFILE OF THE ACTIVE LAYER USED IN THESE MUST EXHIBIT A SHARP ACTIVE LAYER-SUBSTRATE INTERFACE SO THAT ABRUPT PINCH OFF CAN BE OBTAINED. THIS IS VERY IMPORTANT IN ORDER TO OBTAIN HIGH POWER OUTPUT CAPAVILITY AND EFFICIENCY, ESPECIALLY WHEN THE DC POWER IS THROTTLED DOWN. THE ABILITY OF THE FLASH ANNEALING IN PRODUCING SHARP DOPING PROFILES THROUG REDUCTION OF DIFFUSION DURING HIGH-TEMPERTURE PROCESSING WILL MAKE POSSIBLE HIGHER PERFORMING POWER FETS. THE PRECISE SYNTHESIS OF DOPING PROFILES WITH FLASH ANNEALING OF MULTIPLE ION IMPLANTATION WILL BE STUDIED. THE ENHANCEMENT IN PERFORMANCE SUCH AS POWER OUTPUT, EFFICIENCY, GAIN, AND DYNAMIC RANGE OF POWER FETS USING THESE DOPING PROFILES WILL BE DEMONSTRATED.

Principal Investigator:


0

Business Contact:

Daniel R. Ch'en
8055846642
Small Business Information at Submission:

Microwave Monolithics Inc.
465 Easy Street, Unit F Simi Valley, CA 93065

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No