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COMPONENTS

Award Information

Agency:
Department of Defense
Branch:
Army
Award ID:
2382
Program Year/Program:
1985 / SBIR
Agency Tracking Number:
2382
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Microwave Monolithics Inc.
465 East Easy St Unit F Simi Valley, CA 93065
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Woman-Owned: No
Minority-Owned: Yes
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 1985
Title: COMPONENTS
Agency / Branch: DOD / ARMY
Contract: N/A
Award Amount: $79,658.00
 

Abstract:

ALTHOUGH HIGH PERFORMANCE GAAS VARACTOR DIODES ARE READILY AVAILABLE AS DISCRETE DEVICES FABRICATED ON HEAVILY DOPED MATERIAL, THEIR INCLUSION IN MMIC (MONOLITHIC MICROWAVE INTEGRATED CIRCUIT) COMPONENTS IS PRECLUDED BY THE REQUIREMENT FOR A SEMI-INSULATING SUBSTRATE. HIGHQ IS REQUIRED FOR HIGH PERFORMANCE MILLIMETER WAVE COMPONENTS SUCH AS VCO'S, TUNABLE FILTERS, AND FREQUENCY MULTIPLIERS. A DEVELOPMENT PROGRAM FOR HIGH PERFORMANCE GAAS VARACTOR DIODES COMPATIBLE WITH MMICAND HEMT TECHNOLOGY AT MICROWAVE AND MILLIMETER WAVE FREQUENCIES IS HEREBY PROPOSED. INCLUDED ARE THEORETICAL AND EXPERIMENTAL EVALUATION OF VERTICAL (BURIED CONTACT VARACTOR) AND HORIZONTAL (LATERAL VARACTOR) GEOMETRIES. ION IMPLANTATION IS USED TO FORM THE ACTIVE LAYERS AS WELL AS LOW RESISTANCE CONTACTS FOR HIGH Q, AND TAILORING OF THE DOPING PROFILES IS CONSIDERED FOR OPTIMIZATION TO VARIOUS PERFORMANCE OBJECTIVES. A PROPRIETARY "FLASH ANNEALING" TECHNIQUE IS USED TO MINIMIZE DIFFUSION AND PRESERVE THE IMPLANTED PROFILE.

Principal Investigator:

Wendell c petersen
8055846642

Business Contact:

Small Business Information at Submission:

Microwave Monolithics Inc
465 E Easy St Simi Valley, CA 93065

EIN/Tax ID:
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No