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Type II InAs/GaSb Superlattices on GaAs for Infrared Photodetectors

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
69659
Program Year/Program:
2006 / SBIR
Agency Tracking Number:
B041-053-0139
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
MP Technologies, LLC
1500 Sheridan RD, SUITE 8A Wilmette, IL -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2006
Title: Type II InAs/GaSb Superlattices on GaAs for Infrared Photodetectors
Agency / Branch: DOD / MDA
Contract: HQ0006-06-C-7326
Award Amount: $500,000.00
 

Abstract:

Cheaper and higher performance infrared detectors in the mid and long wavelength infrared (MWIR and LWIR) spectral bands are needed for next generation ballistic missile defense programs. Type II InAs/GaSb superlattices represent the most promising material system capable of delivering a more affordable and producible focal plane array (FPA) technology than the current technology, while at the same time exhibiting similar or better performance. Two of the major challenges in the realization of FPA in this system pertain to the unintentionally doped p-type GaSb substrate used in the growth of type II superlattices: its strong infrared absorption and its thermal mismatch with the ROIC that leads to cracking upon hybridization and thus limits the FPA size. It is here proposed to demonstrate a prototype single element superlattice photodetectors and pixel arrays on more robust and optically transparent (in the infrared spectral bands of interest) GaAs substrates.

Principal Investigator:

Patrick Kung
Technical Director
8474917208
patrick.kung@usa.net

Business Contact:

Manijeh Razeghi
President
8474917208
razeghi@ece.northwestern.edu
Small Business Information at Submission:

MP TECHNOLOGIES, LLC
1801 Maple Avenue Evanston, IL 60201

EIN/Tax ID: 364280738
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No