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LWIR Focal Plane Arrays based on Type-II InAs/GaSb Superlattices
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 2
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Fiscal Year: 2009Title: LWIR Focal Plane Arrays based on Type-II InAs/GaSb SuperlatticesAgency / Branch: DOD / MDAContract: HQ0147-09-C-7030Award Amount: $999,857.00
Abstract:
Infrared photon sensors presently available for ballistic missile defense applications, with a cutoff wavelength ~10 micron, are based on HgCdTe. These suffer from a high non-uniformity and thus a high focal plane array cost. The most promising alternative is III-V compound semiconductor superlattices based on arsenides and antimonides, such as Type-II InAs/GaSb superlattices, which are expected to exhibit higher quantum efficiency and uniformity than current systems. This Phase II project plans to capitalize on previous Phase I and Phase II efforts, integrating them in order to advance the technology for Type-II InAs/GaSb superlattices in order to demonstrate and deliver prototype 256x320 focal plane arrays with an ~10 micron cutoff wavelength. This improved device will incorporate a hybrid M-structure - double-heterostructure design for significantly improved R0A and overall device performance.Small Business Information at Submission:MP TECHNOLOGIES, LLC
1801 Maple Avenue Evanston, IL 60201EIN/Tax ID: 364280738DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: Department of Defense |
Branch: Missile Defense Agency |
Award ID: 86449 |
Program Year/Program: 2009 / SBIR |
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Agency Tracking Number: B073-032-0024 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |