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Company Information:

Company Name: Myk Technology Inc
City: Industry
State: CA
Zip+4: 91789
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
Website URL: N/A
Phone: N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $349,855.00 7
SBIR Phase II $1,070,000.00 2

Award List:

GAAS MONOLITHIC ELECTRONIC PHASE SHIFTERS ARE PROPOSED FOR 35 GHZ TO 94 GHZ APPLICATIONS.

Award Year / Program / Phase: 1986 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Dr yu-wen chang
Award Amount: $49,919.00
Abstract:
Gaas monolithic electronic phase shifters are proposed for 35 ghz to 94 ghz applications. two dimensional planar array configurations are possible with these monolithic phase shifters.

PLACING MULTIPLE DETECTOR ARRAY AT THE FOCAL PLANE OF A REFLECTOR ANTENNA CAN INCREASE ANGULAR RESOLUTION ON TARGET.

Award Year / Program / Phase: 1986 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Dr yu-wen chang
Award Amount: $49,941.00
Abstract:
Placing multiple detector array at the focal plane of a reflector antenna can increase angular resolution on target. a heterodyne mixer detection scheme is proposed with the mixer diode array pumpled by a common local oscillator. sum/difference phase detection will allow the resolution of more than… More

LOW COST DUAL-POLARIZED MILLIMETER WAVE ANTENNA

Award Year / Program / Phase: 1987 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Dr yu-wen chang
Award Amount: $50,000.00
Abstract:
Polarization switchable monopulse antenna configuration is proposed. the antenna can be directly integrated with 94 ghz integrated circuit frontend and monopulse comparator circuit and using casagranian reflector to provide the antenna aperture.

ADVANCED MILLIMETER HIGH EFFICIENCY GUNN OSCILLATOR SENSOR

Award Year / Program / Phase: 1987 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Dr Yu-wen Chang
Award Amount: $49,996.00

MILLIMETER WAVE INP DEVICE STRUCTURES

Award Year / Program / Phase: 1987 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Dr Yu-wen Chang
Award Amount: $50,000.00

ADVANCED MILLIMETER HIGH EFFICIENCY GUNN OSCILLATOR SENSOR

Award Year / Program / Phase: 1988 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: Dr Yu-wen Chang
Award Amount: $570,000.00
Abstract:
High efficiency millimeter wave gunn oscillators are used as 94 ghz sensors for small missile and submunition applications. the sensor is based on ultra-linear fmcw waveform with an integrated circuit frontend construction suitable for both hybrid and monolithic circuit integration.

MILLIMETER WAVE INP DEVICE STRUCTURES

Award Year / Program / Phase: 1988 / SBIR / Phase II
Agency / Branch: DOD / ARMY
Principal Investigator: Dr Yu-wen Chang
Award Amount: $500,000.00
Abstract:
Metal-organic chemical vapor deposition (mocvd) is proposed to grow multi-layer inp/gainasp heterojunction current limiting contact and thin high-low-high contact for high efficiency inp gunn devices at millimeter wave frequencies, specially at 94 ghz. discrete and monolithic gunn oscillators will… More

MILLIMETER WAVE NET COMMUNICATION

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency / Branch: DOD / ARMY
Principal Investigator: Dr yu-wen chang
Award Amount: $50,032.00
Abstract:
Covert communication, in a countermeasure heavy environment, can use millimeter wave line-of-sight communication in packet switching configurations to extend link range, and increase link survivability. innovative concept is proposed for quick beam lock-on, coherent data communication, and… More

60 GHZ IMPATT DIODES

Award Year / Program / Phase: 1988 / SBIR / Phase I
Agency / Branch: DOD / USAF
Principal Investigator: Dr keli wang
Award Amount: $49,967.00
Abstract:
Double drift 60 ghz gaas impatt diodes are proposed for space system applications. high efficiency impatt structures performance such as gaas "read" is limited by material growth technology to fabricate very thin n and p layers, and by heatsink technique. mocvd is proposed for the diode doping… More