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60 GHZ IMPATT DIODES

Award Information
Agency: Department of Defense
Branch: Air Force
Contract: N/A
Agency Tracking Number: 8901
Amount: $49,967.00
Phase: Phase I
Program: SBIR
Solicitation Topic Code: N/A
Solicitation Number: N/A
Timeline
Solicitation Year: N/A
Award Year: 1988
Award Start Date (Proposal Award Date): N/A
Award End Date (Contract End Date): N/A
Small Business Information
1140-p Centre Dr
Industry, CA 91789
United States
DUNS: N/A
HUBZone Owned: No
Woman Owned: No
Socially and Economically Disadvantaged: No
Principal Investigator
 DR KELI WANG
 (714) 594-0347
Business Contact
Phone: () -
Research Institution
N/A
Abstract

DOUBLE DRIFT 60 GHZ GAAS IMPATT DIODES ARE PROPOSED FOR SPACE SYSTEM APPLICATIONS. HIGH EFFICIENCY IMPATT STRUCTURES PERFORMANCE SUCH AS GAAS "READ" IS LIMITED BY MATERIAL GROWTH TECHNOLOGY TO FABRICATE VERY THIN N AND P LAYERS, AND BY HEATSINK TECHNIQUE. MOCVD IS PROPOSED FOR THE DIODE DOPING PROFILE GROWTH AND A DOUBLE HEATSKIN IS PROPOSED FOR HEAT DISSIPATION. TRADE-OFFS OF DIFFERENT IMPATT STRUCTURE WILL BE CONDUCTED FOR APPLICATIONS MEETING SPACE SYSTEM REQUIREMENTS.

* Information listed above is at the time of submission. *

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