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High Flux Atomic Nitrogen Source for GaN Growth

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
64240
Program Year/Program:
2003 / SBIR
Agency Tracking Number:
031-0186
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Nanohmics, Inc
6201 East Oltorf St. Suite 400 Austin, TX 78741-
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2003
Title: High Flux Atomic Nitrogen Source for GaN Growth
Agency / Branch: DOD / MDA
Contract: F3361503M5430
Award Amount: $69,671.00
 

Abstract:

Current gallium nitride epitaxial growth systems suffer from low atomic nitrogen flux density, yielding materials having high intrinsic conduction due to nitrogen deficiencies or defects. A number of atomic nitrogen sources exist for MBE epitaxial growthof gallium nitride but the flux density is relatively low and these sources still contain a significant percentage of molecular nitrogen in the beam which can lead to defects. Nanohmics proposes to use a high-flux-density atomic nitrogen source for defectfree epitaxial gallium nitride (GaN) growth. This unique nitrogen source uses using supersonic beam technology. This technology will greatly increase the atomic nitrogen flux density striking the surface during growth.Supersonic beams have a number of advantages over conventional gas sources. First, the mean free path is longer than the source-to-sample distance eliminating gas-gas interactions therefore the atomic nitrogen will not recombine. Secondly, supersonicbeams are monoenergetic and the kinetic energy of the incident beam can be varied by changing the input gas temperature. Therefore this source can deliver a very high flux density of monoenergetic atomic nitrogen to the sample which can influence thesurface mobility and the defect density. The anticipated benefits of a high-flux-density atomic nitrogen source are improved gallium nitride growth with lower intrinsic carrier densities. The improved gallium nitride will lead to improvements in detectors for space communications, space-basedmissile launch detectors, UV search and track, environmental monitoring, engine combustion, UV diode lasers, and flame detection. Additional benefits will be in high power electronics using GaN based devices.

Principal Investigator:

Keith Jamison
President
5123490835
kjamison@austin.rr.com

Business Contact:

Keith Jamison
President
5123490835
kjamison@nanohmics.com
Small Business Information at Submission:

NANOHMICS, INC.
4302 Rimdale Dr. Austin, TX 78731

EIN/Tax ID: 743072245
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No