Novel Highly-Linear Imprint Nanowire FET

Award Information

Agency: Department of Defense	Branch: Defense Advanced Research Projects Agency	Award ID: 91917	Program Year/Program: 2009 / SBIR
Agency Tracking Number: 09SB2-0251	Solicitation Year: N/A	Solicitation Topic Code: N/A	Solicitation Number: N/A

Small Business Information: Nanohmics, Inc
6201 East Oltorf St. Suite 100 Austin, TX 78741-7511
View profile »

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No

Phase 1: Fiscal Year: 2009

Title: Novel Highly-Linear Imprint Nanowire FET

Agency / Branch: DOD / DARPA

Contract: W31P4Q-10-C-0052

Award Amount: $98,964.00

Abstract:
Nanohmics proposes to design a nanowire-based FET (NWFET) around an advanced nanolithographic imprint methodology which will lead to a scalable and economically competitive manufacturing process. The NWFET will consist of Si nanowires etched from an epitaxially deposited single crystal layer of Si, followed by silicon dioxide dielectric, then the gate, source, and drain structures. As opposed to other construction methodologies, this device will employ a very high density of current carrying nanowires for increased power density and reduced bias voltage requirements. Advanced modeling techniques will be used to optimize the linearity, power consumption, and bandwidth.

Principal Investigator:
Andrew Milder
Principal Scientist
5123899990
amilder@nanohmics.com

Business Contact:
Keith Jamison
President
5123899990
kjamison@nanohmics.com

Small Business Information at Submission:

NANOHMICS, INC.
6201 East Oltorf St. Suite 400 Austin, TX 78741

EIN/Tax ID: 743072245

DUNS: N/A

Number of Employees:

Woman-Owned: No

Minority-Owned: No

HUBZone-Owned: No