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Novel Highly-Linear Imprint Nanowire FET

Award Information

Agency:
Department of Defense
Branch:
Defense Advanced Research Projects Agency
Award ID:
91917
Program Year/Program:
2009 / SBIR
Agency Tracking Number:
09SB2-0251
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Nanohmics, Inc
6201 East Oltorf St. Suite 400 Austin, TX 78741-7511
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2009
Title: Novel Highly-Linear Imprint Nanowire FET
Agency / Branch: DOD / DARPA
Contract: W31P4Q-10-C-0052
Award Amount: $98,964.00
 

Abstract:

Nanohmics proposes to design a nanowire-based FET (NWFET) around an advanced nanolithographic imprint methodology which will lead to a scalable and economically competitive manufacturing process. The NWFET will consist of Si nanowires etched from an epitaxially deposited single crystal layer of Si, followed by silicon dioxide dielectric, then the gate, source, and drain structures. As opposed to other construction methodologies, this device will employ a very high density of current carrying nanowires for increased power density and reduced bias voltage requirements. Advanced modeling techniques will be used to optimize the linearity, power consumption, and bandwidth.

Principal Investigator:

Andrew Milder
Principal Scientist
5123899990
amilder@nanohmics.com

Business Contact:

Keith Jamison
President
5123899990
kjamison@nanohmics.com
Small Business Information at Submission:

NANOHMICS, INC.
6201 East Oltorf St. Suite 400 Austin, TX 78741

EIN/Tax ID: 743072245
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No