The objective of this proposal is to further explore PbSnSe detector array on Si substrate. Two approaches are proposed. One is a zero-risk incremental advance that employs a new growth condition to reduce the dislocation density. Another approach is a novel fabrication technique with high-risk but… More
Award Year / Program / Phase:2007 / STTR / Phase II
Agency / Branch:DOD / MDA
Research Institution:UNIV. OF OKLAHOMA
Principal Investigator:Zhisheng Shi, President, Nanolight Inc
Award Amount:$750,000.00
RI Contact:Suzanne Turek
Abstract:
The objective of this proposal is to further develop IV-VI PbSnSe detectors epitaxially grown on Si substrates. The motivation of fabricating IV-VI detector arrays on Si is based on the following advantages of IV-VI Pb-salt semiconductors. (1) The large dielectric constant helps screen and localize… More