Innovative Nanoimprint Lithography Mask Technology for Sub-45 nm Features
Agency / Branch:
DOD / DARPA
The objective of the Phase-II proposal is to, based on the accomplishments of Phase-I, further explore and develop innovative nanoimprint lithography (NIL) mask technologies for sub-45 nm node, including mask structures, mask fabrication methods and mask coatings. In particular, we will further explore the solutions to the problems of line edge roughness, mask distortions, wear-out of anti-adhesion layers, non-uniform mask pattern depth, and high-resolution electron-beam lithography (EBL) and misalignment of patterns. These new technologies to be developed in Phase-II will significantly improve NIL mask technology, lower its cost, and advance NIL processes for sub-45 nm nodes.
Small Business Information at Submission:
1 Deer Park Drive Suite O Monmouth Junction, NJ 08852
Number of Employees: