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Innovative Nanoimprint Lithography Mask Technology for Sub-45 nm Features
- Small Business Information
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Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 2
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Fiscal Year: 2006Title: Innovative Nanoimprint Lithography Mask Technology for Sub-45 nm FeaturesAgency / Branch: DOD / DARPAContract: W31P4Q-06-C-0104Award Amount: $749,923.00
Abstract:
The objective of the Phase-II proposal is to, based on the accomplishments of Phase-I, further explore and develop innovative nanoimprint lithography (NIL) mask technologies for sub-45 nm node, including mask structures, mask fabrication methods and mask coatings. In particular, we will further explore the solutions to the problems of line edge roughness, mask distortions, wear-out of anti-adhesion layers, non-uniform mask pattern depth, and high-resolution electron-beam lithography (EBL) and misalignment of patterns. These new technologies to be developed in Phase-II will significantly improve NIL mask technology, lower its cost, and advance NIL processes for sub-45 nm nodes.Small Business Information at Submission:NANONEX CORP.
1 Deer Park Drive Suite O Monmouth Junction, NJ 08852EIN/Tax ID: 223672235DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
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Agency: Department of Defense |
Branch: Defense Advanced Research Projects Agency |
Award ID: 74279 |
Program Year/Program: 2006 / SBIR |
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Agency Tracking Number: 04SB3-0244 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |