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Company Information:

Company Name:
NDP Optronics LLC.
Address:
236 Saint Martins Dr SE
Mableton, GA 30126
Phone:
(404) 413-6037
URL:
N/A
EIN:
10702370
DUNS:
118500516
Number of Employees:
N/A
Woman-Owned?:
No
Minority-Owned?:
Yes
HUBZone-Owned?:
No

Commercialization:

Has been acquired/merged with?:
N/A
Has had Spin-off?:
N/A
Has Had IPO?:
N/A
Year of IPO:
N/A
Has Patents?:
N/A
Number of Patents:
N/A
Total Sales to Date $:
$ 0.00
Total Investment to Date $
$ 0.00
POC Title:
N/A
POC Name:
N/A
POC Phone:
N/A
POC Email:
N/A
Narrative:
N/A

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $169,982.00 2
SBIR Phase II $744,026.00 1
STTR Phase I $199,972.00 2
STTR Phase II $749,750.00 1

Award List:

Novel IR Detectors with Response up to 300 microns

Award Year / Program / Phase:
2004 / SBIR / Phase I
Award Amount:
$69,996.00
Agency:
NASA
Principal Investigator:
Dr. Steven G. Matsik, Principal Investigator
Abstract:
The proposed innovation is the development of a novel Heterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) detector responding up to a cutoff wavelength 300 microns using the well developed GaAs/AlGaAs system. The detection is by free carrier absorption in doped emitter layers… More

New Sensing Capabilities: GaN Based Dualband UV-IR Detectors

Award Year / Program / Phase:
2005 / SBIR / Phase I
Award Amount:
$99,986.00
Agency / Branch:
DOD / USAF
Principal Investigator:
S. G. Matsik, Research Associate
Abstract:
The proposed innovation is the development of a novel dual band detector responding in both the UV and IR regions, based on a GaN/AlGaN heterostructure. The IR response is based on HEterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors, which have been demonstrated using… More

New Sensing Capabilities: GaN Based Dualband UV-IR Detectors

Award Year / Program / Phase:
2006 / SBIR / Phase II
Award Amount:
$744,026.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Steven Matsik, Principal Investigator
Abstract:
The proposed innovation is the development of a novel dual band detector responding in both the UV and IR regions, based on a GaN/AlGaN heterostructure. The IR response is based on HEterojunction Interfacial Workfunction Internal Photoemission (HEIWIP) detectors, which was demonstrated using… More

Dualband Polarization Sensitive Quantum Dot Detectors

Award Year / Program / Phase:
2007 / STTR / Phase I
Award Amount:
$99,996.00
Agency / Branch:
DOD / USAF
Principal Investigator:
S. G. Matsik, Research Associate
Research Institution:
GEORGIA STATE UNIV.
RI Contact:
Albertha Barret
Abstract:
The proposed innovation will prove the feasibility of developing a spectral tunable and polarization sensitive quantum dot (QD) based detector in the 2-14 micron range. The aim is to satisfy the U.S. Air Force (USAF) requirements for passive spectral and polarization sensing in the infrared range… More

Polarization Sensitive Bias-Selectable Dual-band Quantum Dot Detectors

Award Year / Program / Phase:
2009 / STTR / Phase II
Award Amount:
$749,750.00
Agency / Branch:
DOD / USAF
Principal Investigator:
S. G. Matsik, Research Associate
Research Institution:
Georgia State University
RI Contact:
Albertha Barret
Abstract:
The proposed innovation will prove the feasibility of developing a spectral tunable and polarization sensitive quantum dot (QD) based detector for the 2-14 micron range. The aim is to satisfy the U.S. Air Force (USAF) requirements for passive spectral and polarization sensing in the infrared range… More

Nano-Structured Multi Band Visible to Long-Wavelength Infrared Detectors

Award Year / Program / Phase:
2010 / STTR / Phase I
Award Amount:
$99,976.00
Agency / Branch:
DOD / USAF
Principal Investigator:
Gamini Ariyawansa, Research Associate
Research Institution:
Georgia State University
RI Contact:
Albertha Barett
Abstract:
The aim of this proposal is to satisfy the U.S. Air Force (USAF) requirements for multi-mode sensing (spatial, spectral, polarization, etc) detectors without external components such as filters and polarizers. The main part of the work will involve the development of a four-band detector with… More