Nitek Inc. proposes to develop deep ultraviolet light emitting diodes having high quantum efficiency, long device lifetime, and large emission area to make usable for force protection objectives of bio-agent threat detection and maneuver sustainment objectives of potable water. The advancements in… More

This Small Business Innovation Research project is to develop a novel semiconductor growth technique resulting in low dislocation density AlInGaN material that can be used to advance the current state of III-Nitride semiconductor device performance. The growth technique termed Metalorganic Hydride… More

This SBIR Phase I research program will develop high power, large area, deep ultraviolet LEDs based on a novel vertically conducting geometry that is arbitrarily scalable. AlInGaN based deep ultraviolet LEDs have recently been developed and commercialized. The performance of these UV LEDs has… More

This Small Business Innovation Research (SBIR) Phase II project will result in the commercialization of high power, large area, deep UV LEDs based on a novel vertically conducting geometry that is arbitrarily scalable. AlInGaN based deep UV-B LEDs (ýý = 300 - 340 nm) have recently been… More

This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5). This Small Business Innovation Research Phase II project will result in the development of a novel semiconductor growth technique to produce low dislocation density III-nitride AlInGaN substrate… More

The goal of the Phase I program is to demonstrate the feasibility of our technical approach to grow AlInN lattice Matched Barrier HEMTs on low defect Bulk and quasi-bulk III-Nitride Substrates (GaN). This will be accomplished using our pulsed MOCVD growth technique to deposit AlInN films at a… More

The goal of the Phase I program is to demonstrate the feasibility of a high-voltage, high-temperature insulating gate AlInN-GaN/i-SiC enhancement-mode HEMT to serve as the basic building block of a power converter/inverter. Our technical approach is to use lattice matched AlInN-GaN epilayers in… More

This SBIR Phase II project will result in Nitek Inc. commercializing high power, large area, UVC-LED Lamps based on a novel vertically conducting geometry that is arbitrarily scalable. AlInGaN based deep UVC-LEDs (Ar

This Small Business Innovation Research (SBIR) Phase I project will result in developing novel high-power, high-efficiency Deep Ultraviolet Light Emitting Diode (DUV LED) Lamps based on an innovative and new micro-pixel device design. Deep ultraviolet light sources with emission wavelengths lambda… More

The goal of the Phase II program is to fabricate high voltage high power converter/inverters for high frequency/high temperature operation using enhancement mode-depletion mode insulating ate AlInN-GaN/i-SiC transistor building blocks. Our technical approach is to use lattice matched AlInN-GaN… More