An Official Website of the United States Government
SBIR PHASE I: Bulk AlN Growth For III-Nitride Devices
- Small Business Information
-
Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
- Phase 1
-
Fiscal Year: 2008Title: SBIR PHASE I: Bulk AlN Growth For III-Nitride DevicesAgency: NSFContract: 0740546Award Amount: $99,870.00
Abstract:
This Small Business Innovation Research project is to develop a novel semiconductor growth technique resulting in low dislocation density AlInGaN material that can be used to advance the current state of III-Nitride semiconductor device performance. The growth technique termed Metalorganic Hydride Vapor Phase Epitaxy (MOHVPE) is a hybrid of Metalorganic Chemical Vapor Deposition (MOCVD), used for device growth where atomic layer accuracy is required, and Hydride Vapor Phase Epitaxy (HVPE), used for fast bulk growth. Deep UV light emitting diodes represent a new market opportunity for commercialization of semiconductor products for component and systems use. U.S. based manufacturers have succeeded in competing globally in the visible LED market with two of the five largest LED manufacturers being based in the U.S. with two in Japan and one in Germany. The Deep UV light emitting diodes enabled by this project will find application in water sterilization point of use systems.Small Business Information at Submission:Nitek Incorporated
1804 Salem Church Rd Irmo, SC 29063EIN/Tax ID: 260585137DUNS: N/ANumber of Employees:Woman-Owned: NoMinority-Owned: NoHUBZone-Owned: No
Award Information
|
Agency: National Science Foundation |
Branch: N/A |
Award ID: 88293 |
Program Year/Program: 2008 / SBIR |
|
Agency Tracking Number: 0740546 |
Solicitation Year: N/A |
Solicitation Topic Code: N/A |
Solicitation Number: N/A |