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SBIR PHASE I: Bulk AlN Growth For III-Nitride Devices

Award Information

Agency:
National Science Foundation
Branch:
N/A
Award ID:
88293
Program Year/Program:
2008 / SBIR
Agency Tracking Number:
0740546
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
NITEK, INC.
1804 Salem Church Road Irmo, SC -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2008
Title: SBIR PHASE I: Bulk AlN Growth For III-Nitride Devices
Agency: NSF
Contract: 0740546
Award Amount: $99,870.00
 

Abstract:

This Small Business Innovation Research project is to develop a novel semiconductor growth technique resulting in low dislocation density AlInGaN material that can be used to advance the current state of III-Nitride semiconductor device performance. The growth technique termed Metalorganic Hydride Vapor Phase Epitaxy (MOHVPE) is a hybrid of Metalorganic Chemical Vapor Deposition (MOCVD), used for device growth where atomic layer accuracy is required, and Hydride Vapor Phase Epitaxy (HVPE), used for fast bulk growth. Deep UV light emitting diodes represent a new market opportunity for commercialization of semiconductor products for component and systems use. U.S. based manufacturers have succeeded in competing globally in the visible LED market with two of the five largest LED manufacturers being based in the U.S. with two in Japan and one in Germany. The Deep UV light emitting diodes enabled by this project will find application in water sterilization point of use systems.

Principal Investigator:

Vinod Adivarahan
PhD
8037770710
adivarah@engr.sc.edu

Business Contact:

Vinod Adivarahan
PhD
8037770710
adivarah@engr.sc.edu
Small Business Information at Submission:

Nitek Incorporated
1804 Salem Church Rd Irmo, SC 29063

EIN/Tax ID: 260585137
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No