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Company Information:

Company Name:
Nitronex Corporation
Address:
2305 Presidential Drive
Durham, NC
Phone:
(919) 424-5224
URL:
EIN:
522152956
DUNS:
91129465
Number of Employees:
54
Woman-Owned?:
No
Minority-Owned?:
No
HUBZone-Owned?:
No

Award Totals:

Program/Phase Award Amount ($) Number of Awards
SBIR Phase I $815,684.00 10
SBIR Phase II $2,485,680.00 3
STTR Phase I $304,850.00 4
STTR Phase II $1,268,975.00 2

Award List:

Development of III-V Nitride Diode Arrays for UV Imaging Applications

Award Year / Program / Phase:
1999 / STTR / Phase I
Award Amount:
$65,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Mark Johnson
Research Institution:
North Carolina State University
RI Contact:
N/A
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / STTR / Phase I
Award Amount:
$70,000.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Kevin Linthicum, VP - R&D
Research Institution:
NC STATE UNIV.
RI Contact:
Robert Davis
Abstract:
N/a

N/A

Award Year / Program / Phase:
2000 / SBIR / Phase I
Award Amount:
$64,989.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Mark Johnson, President
Abstract:
N/a

High IP3 AlGaN/GaN HEMT LNAs on Silicon

Award Year / Program / Phase:
2001 / STTR / Phase II
Award Amount:
$400,000.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Kevin Linthicum
Research Institution:
UNIV. OF MICHIGAN
RI Contact:
Dimitris Pavlidis
Abstract:
The phase II proposed effort continues our studies initiated under our phase I work entitled Nitride Semiconductor Substrates. Having demonstrated the ability to produce large area (100-mm) GaN-on-silicon, Nitronex now proposes to advance the technologytowards fabrication and commercialization of… More

Gallium Nitride on Silicon Materials Assessment for GaN-Based Low Noise Amplifiers using Pendeoepitaxial Growth Techniques

Award Year / Program / Phase:
2001 / SBIR / Phase I
Award Amount:
$65,000.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Kevin Linthicum, Director of R & D
Abstract:
Nitronex will develop GaN on silicon substrates for GaN-based LNAs utilizing pendeoepitaxial growth techniques. The properties of these revolutionary low-defect-density GaN on Silicon wafers makes higher performing power devices with a high degree ofdevice integration possible resulting in system… More

AlGaN/GaN HFETs on Silicon for BMDS X-Band Radars

Award Year / Program / Phase:
2006 / STTR / Phase I
Award Amount:
$99,971.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Edwin L. Piner, Director of Materials Engineering
Research Institution:
UNIV. OF FLORIDA
RI Contact:
Stephen J. Pearton
Abstract:
In this program, we will combine commercially available AlGaN/GaN on Si FETs with short gates such that the high frequency performance (X-band and higher) can be significantly increased. The AlGaN/GaN material system has significant advantages over the incumbent technology for X-band applications;… More

L-Band Solid-State High Power Amplifier for Airborne Platforms

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$79,600.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Edwin Piner, Dir. Materials Engineerin
Abstract:
Utilizing Nitronex's solid state GaN FETs and SAIC's design expertise in PAs, a small, lightweight power amplifier can be achieved. Specifically, in this phase I effort, Nitronex will advance GaN technology and design high power (>250W) devices with very low thermal resistance in order to provide… More

Broadband GaN-based Power Amplifier for Airborne Tactical Communication Systems

Award Year / Program / Phase:
2006 / SBIR / Phase I
Award Amount:
$79,421.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Edwin Piner, Director of Materials Eng
Abstract:
Nitronex will use baseline GaN HEMT process (NRF1) to demonstrate feasibility of broadband 35-40W solid-state PA with >35% efficiency across 225-3200MHz frequency range required by the program. Nitronex will establish feasibility by (a) reducing thermal resistance of current generation device… More

High Linearity-High Efficiency Power Amplifiers Based on Digital Signal Processing Techniques and Wide Bandgap Devices

Award Year / Program / Phase:
2006 / STTR / Phase I
Award Amount:
$69,879.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Walter Nagy, RF Device Development Man
Research Institution:
NORTH CAROLINA STATE UNIV.
RI Contact:
Kevin G. Gard
Abstract:
Nitronex Corporation proposes to demonstrate the feasibility of building a DPD system implementing adaptive gate bias control and signal insensitive correction for enhancing the power added efficiency of a 150W GaN based amplifier under OFDM signaling.BENEFITS: Work will result in a high power,… More

GaN HEMTs for Broadband RF Power Amplifier Technology

Award Year / Program / Phase:
2007 / SBIR / Phase I
Award Amount:
$62,061.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Chris Park, Senior Device Engineer
Abstract:
GaN FETs are capable of very high power levels relative to Si or GaAs technologies. This high power density leads to very broadband capability as needed for the 2MHz-2GHz JTRS radio program. Nitronex has commercialized AlGaN/GaN HEMTs on silicon substrates. As such, reliable devices and accurate… More

GaN on Diamond HEMT for Gate Thermal Management

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$70,000.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Edwin L. Piner, Director, Advanced Technology
Abstract:
GaN based HEMTs are capable of achieving high power density at high frequency. Thus, solid-state high power amplifiers based on GaN will be smaller and lighter than incumbent technologies. The use of a silicon substrate for GaN HEMTs provides a reliable GaN device which is also economical. … More

High-Efficiency GaN HEMT SSPAs for S-band Radar

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$70,000.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Thomas A. Winslow, Principal MMIC Engineer
Abstract:
S and X-band radars are central to the Air and Missile defense capability of the US ballistic missile defense (BMD) systems. The objective of this Phase I program is to investigate various PA classes of operation and identify approaches with significantly improved efficiency. The strategy proposed… More

Novel HEMT based on GaN on Diamond for High Power Amplifiers

Award Year / Program / Phase:
2008 / SBIR / Phase I
Award Amount:
$99,784.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Edwin L. Piner, Director of Advanced Technology
Abstract:
GaN based HEMTs are capable of achieving high power density at high frequency. Thus, solid-state high power amplifiers based on GaN will be smaller and lighter than incumbent technology. The use of a silicon substrate for GaN HEMTs provides a reliable GaN device which is also economical. MMICs based… More

AlGaN/GaN HFETs on Silicon for BMDS X-Band Radars

Award Year / Program / Phase:
2008 / STTR / Phase II
Award Amount:
$868,975.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Pradeep Rajagopal, Program Manager
Research Institution:
UNIV. OF FLORIDA
RI Contact:
Stephen Pearton
Abstract:
AlGaN/GaN FETs on Si will be developed and optimized for operation at high frequency (X-band and above). The high frequency performance will be improved by modifications to the existing commercialized sub-4GHz GaN FET platform technology that's currently available at Nitronex. The modifications… More

GaN FETs for Class D PAs and broadband MMICs

Award Year / Program / Phase:
2008 / SBIR / Phase II
Award Amount:
$750,000.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Pradeep Rajagopal, Program Manager
Abstract:
The objective of the Phase II SBIR is to develop our GaN FET technology and satisfy the needs of NAVAIR communications systems. Specifically, we will be developing GaN FET technology that is suitable for Class D operation at frequencies up to 2GHz. We will achieve the program objectives by… More

GaN HEMTs for 1kW L-band E2C HPA

Award Year / Program / Phase:
2008 / SBIR / Phase II
Award Amount:
$750,000.00
Agency / Branch:
DOD / NAVY
Principal Investigator:
Pradeep Rajagopal, Program Manager
Abstract:
GaN HEMTs have the ability to delivery very high power levels when operated at at high voltages (48V). Therefore, they are ideally suited for high power amplifiers such as the E2C HPA used in the Advanced Hawkeye aircraft. The current version of the E2C HPA utilizes silicon technology. We propose to… More

Novel HEMT based on GaN on Diamond for High Power Amplifiers

Award Year / Program / Phase:
2009 / SBIR / Phase II
Award Amount:
$985,680.00
Agency / Branch:
DOD / MDA
Principal Investigator:
Edwin L. Piner, Director, Advanced Techno
Abstract:
The performance and reliability of AlGaN/GaN HEMT transistor technology is closely coupled to the ability to reduce the thermal resistance of the device and to maintain a reasonable junction temperature. Current commercial products offered by Nitronex pro

X-Band and Ka Band Low Noise Block Downconverter

Award Year / Program / Phase:
2011 / SBIR / Phase I
Award Amount:
$99,911.00
Agency:
DOD
Principal Investigator:
Alan Victor, Principal RF Engineer – (919) 807-9100
Abstract:
Nitronex Corporation has identified unique innovations in Gallium Nitride (GaN) high electron mobility transistors (HEMT) for realizing advancements in X and Ka-Band low noise amplifiers (LNAs). These advancements are based on existing GaN on silicon (Si), radio frequency (RF) power amplifier (PA)… More

X-Band GaN Power Amplifiers for Long Range Space RF Telecommunications

Award Year / Program / Phase:
2012 / SBIR / Phase I
Award Amount:
$124,918.00
Agency:
NASA
Principal Investigator:
Dr. Alan Victor, Principal Investigator
Abstract:
The future capabilities of sensors and instrumentation deployed in space will continue to increase, resulting in increasing amounts of collected data. To reach these higher speed data rates, increases to the overall system gain of the communication link will be required. A deterministic method to… More