The phase II proposed effort continues our studies initiated under our phase I work entitled Nitride Semiconductor Substrates. Having demonstrated the ability to produce large area (100-mm) GaN-on-silicon, Nitronex now proposes to advance the technologytowards fabrication and commercialization of… More

Nitronex will develop GaN on silicon substrates for GaN-based LNAs utilizing pendeoepitaxial growth techniques. The properties of these revolutionary low-defect-density GaN on Silicon wafers makes higher performing power devices with a high degree ofdevice integration possible resulting in system… More

In this program, we will combine commercially available AlGaN/GaN on Si FETs with short gates such that the high frequency performance (X-band and higher) can be significantly increased. The AlGaN/GaN material system has significant advantages over the incumbent technology for X-band applications;… More

Utilizing Nitronex's solid state GaN FETs and SAIC's design expertise in PAs, a small, lightweight power amplifier can be achieved. Specifically, in this phase I effort, Nitronex will advance GaN technology and design high power (>250W) devices with very low thermal resistance in order to provide… More

Nitronex will use baseline GaN HEMT process (NRF1) to demonstrate feasibility of broadband 35-40W solid-state PA with >35% efficiency across 225-3200MHz frequency range required by the program. Nitronex will establish feasibility by (a) reducing thermal resistance of current generation device… More

Nitronex Corporation proposes to demonstrate the feasibility of building a DPD system implementing adaptive gate bias control and signal insensitive correction for enhancing the power added efficiency of a 150W GaN based amplifier under OFDM signaling.BENEFITS: Work will result in a high power,… More

GaN FETs are capable of very high power levels relative to Si or GaAs technologies. This high power density leads to very broadband capability as needed for the 2MHz-2GHz JTRS radio program. Nitronex has commercialized AlGaN/GaN HEMTs on silicon substrates. As such, reliable devices and accurate… More

GaN based HEMTs are capable of achieving high power density at high frequency. Thus, solid-state high power amplifiers based on GaN will be smaller and lighter than incumbent technologies. The use of a silicon substrate for GaN HEMTs provides a reliable GaN device which is also economical. … More

S and X-band radars are central to the Air and Missile defense capability of the US ballistic missile defense (BMD) systems. The objective of this Phase I program is to investigate various PA classes of operation and identify approaches with significantly improved efficiency. The strategy proposed… More

GaN based HEMTs are capable of achieving high power density at high frequency. Thus, solid-state high power amplifiers based on GaN will be smaller and lighter than incumbent technology. The use of a silicon substrate for GaN HEMTs provides a reliable GaN device which is also economical. MMICs based… More

AlGaN/GaN FETs on Si will be developed and optimized for operation at high frequency (X-band and above). The high frequency performance will be improved by modifications to the existing commercialized sub-4GHz GaN FET platform technology that's currently available at Nitronex. The modifications… More

The objective of the Phase II SBIR is to develop our GaN FET technology and satisfy the needs of NAVAIR communications systems. Specifically, we will be developing GaN FET technology that is suitable for Class D operation at frequencies up to 2GHz. We will achieve the program objectives by… More

GaN HEMTs have the ability to delivery very high power levels when operated at at high voltages (48V). Therefore, they are ideally suited for high power amplifiers such as the E2C HPA used in the Advanced Hawkeye aircraft. The current version of the E2C HPA utilizes silicon technology. We propose to… More

The performance and reliability of AlGaN/GaN HEMT transistor technology is closely coupled to the ability to reduce the thermal resistance of the device and to maintain a reasonable junction temperature. Current commercial products offered by Nitronex pro

Nitronex Corporation has identified unique innovations in Gallium Nitride (GaN) high electron mobility transistors (HEMT) for realizing advancements in X and Ka-Band low noise amplifiers (LNAs). These advancements are based on existing GaN on silicon (Si), radio frequency (RF) power amplifier (PA)… More

The future capabilities of sensors and instrumentation deployed in space will continue to increase, resulting in increasing amounts of collected data. To reach these higher speed data rates, increases to the overall system gain of the communication link will be required. A deterministic method to… More