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GaN HEMTs for Broadband RF Power Amplifier Technology

Award Information

Agency:
Department of Defense
Branch:
Navy
Award ID:
82885
Program Year/Program:
2007 / SBIR
Agency Tracking Number:
N072-155-0553
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Nitronex Corporation
2305 Presidential Drive Durham, NC -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 1
Fiscal Year: 2007
Title: GaN HEMTs for Broadband RF Power Amplifier Technology
Agency / Branch: DOD / NAVY
Contract: N00039-08-C-0073
Award Amount: $62,061.00
 

Abstract:

GaN FETs are capable of very high power levels relative to Si or GaAs technologies. This high power density leads to very broadband capability as needed for the 2MHz-2GHz JTRS radio program. Nitronex has commercialized AlGaN/GaN HEMTs on silicon substrates. As such, reliable devices and accurate device models are available for sub-4GHz operation in class AB. During this Phase I, we will demonstrate the feasiblity of a PA based on our GaN FET technology that meets all the JTRS requiements. We will investigate PA designs for this applciation using our current generation discrete devices, our next generation high frequency capable GaN FET devices (that can be used in Class D topology) and our GaN MMICs for this applications.

Principal Investigator:

Chris Park
Senior Device Engineer
9194244204
cpark@nitronex.com

Business Contact:

Pradeep Rajagopal
Program Manager
9194245176
pradeep@nitronex.com
Small Business Information at Submission:

NITRONEX CORP.
2305 Presidential Drive Durham, NC 27703

EIN/Tax ID: 522152956
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No