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GaN HEMTs for 1kW L-band E2C HPA

Award Information

Agency:
Department of Defense
Branch:
Navy
Award ID:
76985
Program Year/Program:
2008 / SBIR
Agency Tracking Number:
N062-125-0960
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Nitronex Corporation
2305 Presidential Drive Durham, NC -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2008
Title: GaN HEMTs for 1kW L-band E2C HPA
Agency / Branch: DOD / NAVY
Contract: N68335-08-C-0001
Award Amount: $750,000.00
 

Abstract:

GaN HEMTs have the ability to delivery very high power levels when operated at at high voltages (48V). Therefore, they are ideally suited for high power amplifiers such as the E2C HPA used in the Advanced Hawkeye aircraft. The current version of the E2C HPA utilizes silicon technology. We propose to develop a reliable 300W GaN packaged device that can be used to develop a significantly lighter and smaller HPA. Specifically, we will be replacing 21 silicon devices with only 5 GaN devices, which is estimated to reduce weight by a factor of 2 with a new system design. Further, we will develop such a device on the reliable GaN FET on Si platform technology that is fully qualified for military and commercial applications. The MTTF of our GaN FET technology is >10 million hours at a Tj of 150 degress celsius.

Principal Investigator:

Pradeep Rajagopal
Program Manager
9194245176
pradeep@nitronex.com

Business Contact:

Edwin Piner
Director of Advanced Tech
9194245167
epiner@nitronex.com
Small Business Information at Submission:

NITRONEX CORP.
2305 Presidential Drive Durham, NC 27703

EIN/Tax ID: 522152956
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No