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Novel HEMT based on GaN on Diamond for High Power Amplifiers

Award Information

Agency:
Department of Defense
Branch:
Missile Defense Agency
Award ID:
86458
Program Year/Program:
2009 / SBIR
Agency Tracking Number:
B073-034-0445
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
Nitronex Corporation
2305 Presidential Drive Durham, NC -
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Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 2009
Title: Novel HEMT based on GaN on Diamond for High Power Amplifiers
Agency / Branch: DOD / MDA
Contract: W9113M-09-C-0207
Award Amount: $985,680.00
 

Abstract:

The performance and reliability of AlGaN/GaN HEMT transistor technology is closely coupled to the ability to reduce the thermal resistance of the device and to maintain a reasonable junction temperature. Current commercial products offered by Nitronex pro

Principal Investigator:

Edwin L. Piner
Director, Advanced Techno
9194245167
epiner@nitronex.com

Business Contact:

Michael Macon
Manager, Contracts
9194245224
mmacon@nitronex.com
Small Business Information at Submission:

NITRONEX CORP.
2305 Presidential Drive Durham, NC 27703

EIN/Tax ID: 522152956
DUNS: N/A
Number of Employees:
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No