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ULTRA-DENSE MAGNETORESISTIVE MASS MEMORY

Award Information

Agency:
National Aeronautics and Space Administration
Branch:
N/A
Award ID:
12044
Program Year/Program:
1991 / SBIR
Agency Tracking Number:
12044
Solicitation Year:
N/A
Solicitation Topic Code:
N/A
Solicitation Number:
N/A
Small Business Information
NVE CORP. (FORMERLY NONVOLATILE ELECTRONICS, INC.
11409 Valley View Road Eden Prairie, MN -
View profile »
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No
 
Phase 2
Fiscal Year: 1991
Title: ULTRA-DENSE MAGNETORESISTIVE MASS MEMORY
Agency: NASA
Contract: N/A
Award Amount: $492,143.00
 

Abstract:

THE PROPOSED CONCEPT IS AN ULTRA-DENSE MAGNETORESISTIVE MASS MEMORY WITH AN ACCESS TIME OF A FEW MICROSECONDS, 100 MBYTES/SECOND DATA RATES, AND HIGH RELIABILITY DUE TO THE INHERENT RELIABILITY OF MAGNETIC STORAGE WITH NO MOVING PARTS. THE MASS MEMORY REQUIRES NO STANDBY POWER AND CAN BERADIATION HARD. THE CONCEPTUAL DESIGN WILL UTILIZE THE MAGNETORESISTIVE RANDOM ACCESS MEMORY (MRAM) TECHNOLOGY CONCEIVED BY TWO OF THE INVESTIGATORS AND DEVELOPED FOR SPACE APPLICATION AT HONEYWELL(1). THE PROPOSED CONCEPTUAL DESIGN PROGRAM FOR A MRAM MASS MEMORY WOULD INCLUDE VERIFICATION TESTING OF MEMORY DENSITIES IN EXCESS OF 10(8) BIT/CM(2), DESIGN AND SIMULATION OF ALL CIRCUIT BLOCKS, A FLOOR PLAN FOR CIRCUITS AND THE INTEGRATED SYSTEM, THERMAL ANALYSIS, ELECTRICAL POWER AND DATA BUS ANALYSIS, AND DENSITY CALCULATIONS. AT THE CONCLUSION OF THE PHASE 1 RESEARCH, ALL PRELIMINARY WORK TO THE START OF A MASS MEMORY SYSTEM DEVELOPMENT WILL HAVE BEEN COMPLETED.

Principal Investigator:

James M. Daughton
President
6129208659

Business Contact:

James m. daughton
PRESIDENT
6129208659
Small Business Information at Submission:

Nonvolatile Electronics, Inc.
5805 Amy Drive Edina, MN 55436

EIN/Tax ID:
DUNS: N/A
Number of Employees: N/A
Woman-Owned: No
Minority-Owned: No
HUBZone-Owned: No